MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | - 20 V, 20 V | 2 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRF9520PBF-BE3 TTI: IRF9520PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 100V 6.8A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRF9520PBF | ||||
Mfr: SI1442DH-T1-BE3 TTI: SI1442DH-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SC70 N CHAN 12V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 12 V | 4 A | 20 mOhms | - 8 V, 8 V | 1 V | 33 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1442DH-T1-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | ||||
Mfr: SUM60061EL-GE3 TTI: SUM60061EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs SC70 P CHAN 80V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 150 A | 8.6 mOhms | - 20 V, 20 V | 2.5 V | 218 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG21N80AEF-GE3 TTI: SIHG21N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 800V 16.3A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 16.3 A | 250 mOhms | - 30 V, 30 V | 4 V | 71 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 148 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 40 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | ||||||
Mfr: SIDR402EP-T1-RE3 TTI: SIDR402EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 40 V | 291 A | 960 uOhms | - 16 V, 20 V | 2.3 V | 165 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIJH5800E-T1-GE3 TTI: SIJH5800E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK8X8L | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 80 V | 302 A | 1.35 mOhms, 1.58 mOhms | - 20 V, 20 V | 2 V, 4 V | 103 nC | - 55 C | + 175 C | 333 W | Reel | ||||||
Mfr: SIHB068N60EF-GE3 TTI: SIHB068N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs TO263 600V 41A N-CH MOSFET | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: SIHG186N60EF-GE3 TTI: SIHG186N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 600V 8.4A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: IRF9510PBF-BE3 TTI: IRF9510PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 100V 4A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRF9510PBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | IRF9Z34PBF | |||||
Mfr: IRFBC40APBF-BE3 TTI: IRFBC40APBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRFBC40APBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | SIHP12N60E-GE3 SIHP12N60E-E3 | |||||
Mfr: SIR681DP-T1-RE3 TTI: SIR681DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK P CHAN 80V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 80 V | 71.9 A | 11.2 mOhms | - 20 V, 20 V | 2.6 V | 31.7 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-BE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | - 30 V, 30 V | 5 V | 198 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 50 A | 55 mOhms | - 20 V, 20 V | 5 V | 140 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF610PBF-BE3 | |||||
Mfr: IRFU420PBF TTI: IRFU420PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 2.4 Amp | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRF9610SPBF TTI: IRF9610SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 1.8A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Reel |