NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF644PBF-BE3 TTI: IRF644PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 250V 14A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | - 20 V, 20 V | 4 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF644PBF | ||||
Mfr: SIHFL110TR-BE3 TTI: SIHFL110TR-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 100V 1.5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | SIHFL110TR-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF730PBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRF520PBF | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 106 A | 3.55 mOhms | - 20 V, 20 V | 2 V | 62.5 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 80 V | 150 A | 2.47 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 2.4 V | 40.5 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | ||||||
Mfr: SI4848BDY-T1-GE3 TTI: SI4848BDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 150-V (D-S) MOSFET SO-8, 89 m a. 10V | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 3.8 A | 89 mOhms | - 20 V, 20 V | 4 V | 6 nC | - 55 C | + 150 C | 4.5 W | Enhancement | Reel | |||||
Mfr: SIR4406DP-T1-GE3 TTI: SIR4406DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 40V | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 40 V | 78 A | 4.75 mOhms | - 20 V, 20 V | 2.4 V | 23.7 nC | - 55 C | + 150 C | 41.6 W | Enhancement | Reel | |||||
Mfr: SIRA06DDP-T1-UE3 TTI: SIRA06DDP-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 125 A | 2.2 mOhms | - 16 V, 20 V | 2.2 V | 31 nC | - 55 C | + 150 C | 59 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2338DS-T1-BE3 SI2338DS-GE3 | ||||
Mfr: SIR140DP-T1-RE3 TTI: SIR140DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 100 A | 900 uOhms | - 16 V, 20 V | 1 V | 113 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR108DP-T1-RE3 TTI: SIR108DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 45 A | 13.5 mOhms | - 20 V, 20 V | 2 V | 41.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 59.6 A | 7.4 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIR826BDP-T1-RE3 TTI: SIR826BDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 80.8 A | 5.1 mOhms | - 20 V, 20 V | 2 V | 69 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA84DP-T1-GE3 TTI: SIRA84DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | - 16 V, 20 V | 2.4 V | 25 nC | - 55 C | + 150 C | 34.7 W | TrenchFET, PowerPAK | Reel | |||||
Mfr: SISS30ADN-T1-GE3 TTI: SISS30ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 80V N-CHANNEL (D-S) MOS | 0In Stock | Si | SMD/SMT | PowerPak-1212-8 | N-Channel | 1 Channel | 80 V | 54.7 A | 8.9 mOhms | - 20 V, 20 V | 2 V | 19.5 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | SISS30ADN | ||||
Mfr: SIHG47N60AE-GE3 TTI: SIHG47N60AE-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 43 A | 56 mOhms | - 30 V, 30 V | 4 V | 121 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 30 V | 4.5 A | 57 mOhms | - 12 V, 12 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 1.9 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 39 A | 2.75 mOhms | - 20 V, 20 V | 1 V | 70 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4126DY-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRL510PBF-BE3 | |||||
Mfr: IRF530STRRPBF TTI: IRF530STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 14A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel |
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