MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 17 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | ||||||
Mfr: IRFIZ24GPBF TTI: IRFIZ24GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 37 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
Mfr: SI4386DY-T1-GE3 TTI: SI4386DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V 16A 3.1W 7.0mohm @ 10V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 16 A | 7 mOhms | - 20 V, 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4386DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | - 25 V, 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 20 A | 6 mOhms | - 16 V, 16 V | 1 V | 95 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4114DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | - 20 V, 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25.4 A | 4.9 mOhms | - 20 V, 20 V | 1 V | 54 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4160DY-GE3 | ||||
Mfr: SI4850EY-T1-GE3 TTI: SI4850EY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | - 20 V, 20 V | 1 V | 18 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | ||||
0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | - 8 V, 8 V | 1 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-E3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 600 V | 16 A | 720 mOhms | - 20 V, 20 V | 2 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | |||||
Mfr: IXTK90P20P TTI: IXTK90P20P IXYS Availability: Not Available OnlineMOSFETs -90.0 Amps -200V 0.044 Rds | Not Available Online | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | - 20 V, 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 3 V | 260 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7633DP-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 40 A | 230 mOhms | - 20 V, 20 V | 4 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | |||||
Mfr: SI5515CDC-T1-E3 TTI: SI5515CDC-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | - 8 V, 8 V | 400 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-E3 | |||
Mfr: SIA517DJ-T1-GE3 TTI: SIA517DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | |||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 70 mOhms | - 8 V, 8 V | 850 mV | 60 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA431DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 18.3 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 38.5 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | ||||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | - 10 V, 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 |