MOSFETs
13,237 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-PLUS-3 | P-Channel | 1 Channel | 200 V | 120 A | 30 mOhms | 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | |||||
Mfr: SIS447DN-T1-GE3 TTI: SIS447DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 12.5 mOhms | 12 V | 1.2 V | 181 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7880ADP-T1-E3 TTI: SI7880ADP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 40A 83W | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3 mOhms | 20 V | 3 V | 84 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7880ADP-E3 | |||
Mfr: SUM65N20-30-E3 TTI: SUM65N20-30-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V 65A 375W 30mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 65 A | 30 mOhms | 20 V | 2 V | 130 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM65N20-30 | |||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: IRFR430ATRPBF TTI: IRFR430ATRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 500V 5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.7 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 110 W | Enhancement | Reel | |||||
Mfr: SI4386DY-T1-E3 TTI: SI4386DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 16A 3.1W 7.0mohm @ 10V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 16 A | 7 mOhms | 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4386DY-E3 | ||||
Mfr: SI7430DP-T1-E3 TTI: SI7430DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 26 A | 45 mOhms | 20 V | 3.5 V | 43 nC | - 55 C | + 150 C | 64 W | Enhancement | TrenchFET | Reel | SI7430DP-E3 | |||
Mfr: IRFU9014PBF TTI: IRFU9014PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 60V 5.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: IRFI840GLCPBF TTI: IRFI840GLCPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 500V 4.5A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 850 mOhms | 30 V | 2 V | 39 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
Mfr: SI4166DY-T1-GE3 TTI: SI4166DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30.5 A | 3.9 mOhms | 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET | Reel | SI4166DY-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | ||||
Mfr: SI4154DY-T1-GE3 TTI: SI4154DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 36 A | 3.3 mOhms | 20 V | 1 V | 105 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4154DY-GE3 | |||
Mfr: SIR166DP-T1-GE3 TTI: SIR166DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3.2 mOhms | 20 V | 1.2 V | 77 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR166DP-GE3 | |||
Mfr: SI8800EDB-T2-E1 TTI: SI8800EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.8 A | 80 mOhms | 8 V | 400 mV | 8.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 200 mA | 30 Ohms | 20 V | 5 V | - 55 C | + 150 C | 1.1 W | Depletion | Tube | |||||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 150 mOhms | 8 V | 1 V | 38 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA413DJ-GE3 | ||||
Mfr: SI7998DP-T1-GE3 TTI: SI7998DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 25 A, 30 A | 5.3 mOhms, 9.3 mOhms | 20 V | 2.5 V | 17 nC, 32 nC | - 55 C | + 150 C | 22 W, 40 W | Enhancement | TrenchFET | Reel | SI7998DP-GE3 | |||
Mfr: SIA433EDJ-T1-GE3 TTI: SIA433EDJ-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 15 mOhms | 12 V | 1.2 V | 75 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA433EDJ-GE3 | |||
Mfr: SI2325DS-T1-E3 TTI: SI2325DS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 690 mA | 1.2 Ohms | 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-E3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 110 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF730PBF-BE3 | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube |