Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4532CDY-T1-GE3 TTI: SI4532CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 N&P PAIR | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 30 V | 4.3 A, 6 A | 47 mOhms, 89 mOhms | - 20 V, 20 V | 1 V | 6 nC, 7.8 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI4532CDY-GE3 | |||
Mfr: SI8802DB-T2-E1 TTI: SI8802DB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 3.5 A | 54 mOhms | - 5 V, 5 V | 350 mV | 4.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SC-75-3 | N-Channel | 1 Channel | 20 V | 600 mA | 396 mOhms | - 8 V, 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 240 mW | Enhancement | TrenchFET | Reel | SI1012CR-GE3 | ||||
Mfr: SI3443DDV-T1-GE3 TTI: SI3443DDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 4 A | 90 mOhms | - 12 V, 12 V | 1.5 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3443DDV-T1-BE3 | |||
Mfr: SIA483DJ-T1-GE3 TTI: SIA483DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 20 V | 2.2 V | 45 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM50010E-GE3 TTI: SUM50010E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds; 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 150 A | 1.75 mOhms | - 20 V, 20 V | 2 V | 212 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1903DL-T1-GE3 | ||||
Mfr: SISS40DN-T1-GE3 TTI: SISS40DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 100 V | 36.5 A | 21 mOhms | - 20 V, 20 V | 2.3 V | 24 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | - 8 V, 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | ||||
Mfr: SI3421DV-T1-GE3 TTI: SI3421DV-T1-GE3 Vishay Semiconductors Availability: 0In Stock6,000 On Order Expected 06-Aug-27 MOSFETs -30V Vds 20V Vgs TSOP-6 | 0In Stock6,000 On Order Expected 06-Aug-27 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 1 V | 46 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors MOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 2 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | ||||||
Mfr: IRFP264PBF TTI: IRFP264PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 250V 38A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2343CDS-T1-BE3 SI2343CDS-GE3 | ||||
Mfr: SIR804DP-T1-GE3 TTI: SIR804DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.2 mOhms | - 20 V, 20 V | 1.2 V | 50.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR804DP-GE3 | |||
Mfr: SIHF640S-GE3 TTI: SIHF640S-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 130 W | Enhancement | Reel | |||||
Mfr: SIHFU9024-GE3 TTI: SIHFU9024-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -60V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | Reel | |||||||||||||||||
Mfr: SIRA12DP-T1-GE3 TTI: SIRA12DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 4.3mOhm@10V 25A N-Ch G-IV | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA12DP-GE3 | |||
Mfr: SUD23N06-31L-T4-E3 TTI: SUD23N06-31L-T4-E3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH 60-V (D-S) 175C Logic Level | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | - 20 V, 20 V | 1 V | 17 nC | - 55 C | + 175 C | 100 W | Enhancement | TrenchFET | Reel | SUD23N06-31L-T4BE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 19.8 A | 4.6 mOhms | - 20 V, 20 V | 1 V | 30 nC | - 55 C | + 150 C | 3.25 W | Enhancement | TrenchFET | Reel | SI4204DY-GE3 | ||||
Mfr: SI7858BDP-T1-GE3 TTI: SI7858BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 12 V | 40 A | 2.5 mOhms | - 8 V, 8 V | 1 V | 56 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel |
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