Vishay - MOSFETs
8,352 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
Mfr: SI4943CDY-T1-GE3 TTI: SI4943CDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock10,000 On Order Expected 05-Nov-27 MOSFETs -20V Vds 20V Vgs SO-8 | 0In Stock10,000 On Order Expected 05-Nov-27 | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | |||
Mfr: SI2309CDS-T1-GE3 TTI: SI2309CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock27,000 On Order Expected 16-Sep-27 MOSFETs -60V Vds 20V Vgs SOT-23 | 0In Stock27,000 On Order Expected 16-Sep-27 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2369DS-T1-BE3 | ||||
Mfr: SI4946CDY-T1-GE3 TTI: SI4946CDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 6.1 A | 51.6 mOhms | 20 V | 3 V | 2.4 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | |||||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
Mfr: SI5935CDC-T1-GE3 TTI: SI5935CDC-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | 8 V | 400 mV | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-GE3 SIR814DP-T1-GE3 | |||
Mfr: SISA14DN-T1-GE3 TTI: SISA14DN-T1-GE3 Vishay / Siliconix MOSFETs For New Design See: 78-SISHA14DN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIB457EDK-T1-GE3 TTI: SIB457EDK-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 20 V | 9 A | 29 mOhms | 8 V | 1 V | 44 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB457EDK-GE3 | |||
Mfr: IRF530STRLPBF TTI: IRF530STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 14 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
Mfr: IRFR9024TRPBF TTI: IRFR9024TRPBF Vishay Semiconductors Availability: 0In Stock2,000 On Order Expected 09-Dec-27 MOSFETs TO252 60V 8.8A P-CH MOSFET | 0In Stock2,000 On Order Expected 09-Dec-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9024TRPBF-BE3 | ||||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: SIDR5802EP-T1-RE3 TTI: SIDR5802EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 80V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8DC | N-Channel | 1 Channel | 80 V | 153 A | 2.9 mOhms | 20 V | 4 V | 28 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIB406EDK-T1-GE3 TTI: SIB406EDK-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 6 A | 46 mOhms | 12 V | 600 mV | 12 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB406EDK-GE3 | |||
Mfr: SI4936CDY-T1-GE3 TTI: SI4936CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | |||
Mfr: SISS05DN-T1-GE3 TTI: SISS05DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK P CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 108 A | 5.8 mOhms | - 20 V, 16 V | 2.2 V | 76 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | IRF530PBF | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | |||||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9926CDY-GE3 | |||
Mfr: SIA533EDJ-T1-GE3 TTI: SIA533EDJ-T1-GE3 Vishay Semiconductors MOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 34 mOhms, 59 mOhms | 8 V | 400 mV | 10 nC, 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA533EDJ-GE3 | |||
Mfr: SI7415DN-T1-GE3 TTI: SI7415DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-GE3 |