Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF9640STRRPBF TTI: IRF9640STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 11A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRFZ14PBF | |||||
Mfr: SIJH5800E-T1-GE3 TTI: SIJH5800E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK8X8L | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 80 V | 302 A | 1.35 mOhms, 1.58 mOhms | - 20 V, 20 V | 2 V, 4 V | 103 nC | - 55 C | + 175 C | 333 W | Reel | ||||||
Mfr: SIDR626EP-T1-RE3 TTI: SIDR626EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 60V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | - 20 V, 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | - 20 V, 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2369DS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 200 A | 990 uOhms | - 20 V, 20 V | 2.4 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF620PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 8.1 A | 450 mOhms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | - 20 V, 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
Mfr: SI7852DP-T1-GE3 TTI: SI7852DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 7.6 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 34 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7852DP-GE3 | |||
Mfr: SIHP24N80AEF-GE3 TTI: SIHP24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | - 30 V, 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | ||||
Mfr: SISS27DN-T1-GE3 TTI: SISS27DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.6 mOhms | - 20 V, 20 V | 1 V | 92 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB12N60E-GE3 TTI: SIHB12N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | |||||
Mfr: SIRA54DP-T1-GE3 TTI: SIRA54DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.35 mOhms | - 16 V, 20 V | 1.1 V | 104 nC | - 55 C | + 150 C | 36.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 30 A | 12.5 mOhms | - 16 V, 20 V | 1 V | 24 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIR5112DP-T1-RE3 TTI: SIR5112DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 40.7 A | 14.9 mOhms | 10.6 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||||
Mfr: SI8806DB-T2-E1 TTI: SI8806DB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 12 V | 3.9 A | 47 mOhms | - 8 V, 8 V | 400 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR170DP-T1-RE3 TTI: SIR170DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs SOT669 100V 95A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 95 A | 4 mOhms | - 20 V, 20 V | 5.5 V | 93 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP6N80E-GE3 TTI: SIHP6N80E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 800V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHP6N80E-BE3 | ||||
Mfr: SIR188DP-T1-RE3 TTI: SIR188DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 3.85 mOhms | - 20 V, 20 V | 2 V | 29 nC | - 55 C | + 150 C | 65.7 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIR640ADP-T1-GE3 TTI: SIR640ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 100 A | 1.65 mOhms | - 20 V, 20 V | 900 mV | 90 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1411DH-T1-GE3 TTI: SI1411DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 150 V | 520 mA | 2.7 Ohms | - 20 V, 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 1 W | Enhancement | TrenchFET | Reel | SI1411DH-T1-BE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 26 nC | - 55 C | + 150 C | 37.9 W | Enhancement | TrenchFET | Reel | SI7686DP-E3 |
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