Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS782DN-T1-GE3 TTI: SIS782DN-T1-GE3 Vishay Semiconductors Availability: 108,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 108,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 30.5 nC | - 50 C | + 150 C | 41 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS782DN-GE3 | |||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH SINGLE 500V TO247 | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI2301CDS-T1-BE3 TTI: SI2301CDS-T1-BE3 Vishay / Siliconix Availability: 27,000In StockMOSFETs SOT23 P CHAN 20V | 27,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | - 8 V, 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | SI2301CDS-T1-GE3 | ||||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: IRFZ24SPBF TTI: IRFZ24SPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs 60V 100mOhm@10V 17A N-Ch | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
Mfr: SISS71DN-T1-GE3 TTI: SISS71DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -100V Vds 20V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 23 A | 47 mOhms | - 20 V, 20 V | 2.5 V | 30 nC | - 50 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | - 20 V, 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: SI2328DS-T1-E3 TTI: SI2328DS-T1-E3 Vishay Semiconductors Availability: 87,000In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 87,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-E3 | |||
3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: SUM110P08-11L-E3 TTI: SUM110P08-11L-E3 Vishay / Siliconix Availability: 800In StockMOSFETs 80V 110A 375W | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 110 A | 11.2 mOhms | - 20 V, 20 V | 1 V | 180 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 50,000In StockMOSFETs 100V Vds 20V Vgs SO-8 | 50,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: SI4136DY-T1-GE3 TTI: SI4136DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 46 A | 2 mOhms | - 20 V, 20 V | 1 V | 110 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4136DY-GE3 | |||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH SINGLE 1KV TO-220 | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: SI4497DY-T1-GE3 TTI: SI4497DY-T1-GE3 Vishay Semiconductors Availability: 25,000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 25,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 36 A | 2.7 mOhms | - 20 V, 20 V | 2.5 V | 285 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4497DY-GE3 | |||
Mfr: SI2356DS-T1-GE3 TTI: SI2356DS-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs 40V Vds 12V Vgs SOT-23 | 33,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | |||
Mfr: SQJ431EP-T1-GE3 TTI: SQJ431EP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs RECOMMENDED ALT SQJ4 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8L-4 | AEC-Q100 | TrenchFET | Reel | |||||||||||||||
Mfr: SQ1431EH-T1-GE3 TTI: SQ1431EH-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs RECOMMENDED ALT SQ14 | 6,000In Stock | Si | AEC-Q100 | TrenchFET | Reel | SQ1431EH-GE3 | ||||||||||||||||
Mfr: SQM100N10-10-GE3 TTI: SQM100N10-10-GE3 Vishay / Siliconix Availability: 22,400In StockMOSFETs RECOMMENDED ALT SQM1 | 22,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | AEC-Q100 | TrenchFET | Reel | SYB85N10-10 | ||||||||||||||
Mfr: SQ2364EES-T1-GE3 TTI: SQ2364EES-T1-GE3 Vishay Availability: 87,000In StockMOSFETs SOT23 N-CH 60V 2A | 87,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQ2308CES-T1-BE3 TTI: SQ2308CES-T1-BE3 Vishay Availability: 114,000In StockMOSFETs SOT23 N CHAN 60V | 114,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQS840EN-T1-GE3 TTI: SQS840EN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs RECOMMENDED ALT SQS8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | AEC-Q101 | TrenchFET | Reel | |||||||||||||||
Mfr: SQJ960EP-T1-GE3 TTI: SQJ960EP-T1-GE3 Vishay / Siliconix Availability: 24,000In StockMOSFETs RECOMMENDED ALT SQJ9 | 24,000In Stock | Si | AEC-Q100 | TrenchFET | Reel | SQJ960EP-GE3 | ||||||||||||||||
Mfr: IRLR024TRPBF TTI: IRLR024TRPBF Vishay Semiconductors Availability: 8,000In StockMOSFETs RECOMMENDED ALT IRLR | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 10 V, 10 V | 1 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SQM110P06-8M9L-GE3 TTI: SQM110P06-8M9L-GE3 Vishay / Siliconix Availability: 800In StockMOSFETs TO263 P-CH 60V 110A | 800In Stock | Si | TrenchFET | Reel |
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