Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA4265EDJ-T1-GE3 TTI: SIA4265EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK P CHAN 20V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.8 A | 32 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 2.9 W | Enhancement | Reel | |||||
Mfr: SIHG24N80AEF-GE3 TTI: SIHG24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 800V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | - 30 V, 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 81.2 A | 4.2 mOhms | - 16 V, 20 V | 3.1 V | 41 nC | - 40 C | + 150 C | 46.2 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SISS52DN-T1-GE3 TTI: SISS52DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK1212-8S | N-Channel | 1 Channel | 30 V | 162 A | 1.2 mOhms | - 12 V, 16 V | 4.2 V | 65 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | - 8 V, 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1965DH-T1-GE3 SI1965DH-T1-E3 | |||||
Mfr: SIA938DJT-T1-GE3 TTI: SIA938DJT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 20V | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 4.5 A | 21.5 mOhms | - 8 V, 12 V | 1.5 V | 3.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM70030M-GE3 TTI: SUM70030M-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 100V 150A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 100 V | 150 A | 3.5 mOhms | - 20 V, 20 V | 142.4 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIJA22DP-T1-GE3 TTI: SIJA22DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 25V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 25 V | 201 A | 740 uOhms | - 16 V, 20 V | 2.2 V | 83 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | - 20 V, 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2347DS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | - 8 V, 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2374DS-T1-GE3 | |||||
Mfr: IRFR014PBF-BE3 TTI: IRFR014PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 N CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014PBF | ||||
Mfr: IRFZ24PBF-BE3 TTI: IRFZ24PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRFZ24PBF | ||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | - 12 V, 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-GE3 | ||||
Mfr: SI1427EDH-T1-BE3 TTI: SI1427EDH-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT363 P CHAN 20V | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2 A | 165 mOhms | - 8 V, 8 V | 1 V | 21 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1427EDH-T1-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | - 20 V, 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-GE3 | ||||
Mfr: SIJH5100E-T1-GE3 TTI: SIJH5100E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PWRPK 100V N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 100 V | 277 A | 1.89 mOhms | - 20 V, 20 V | 4 V | 85 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||
Mfr: SIA112LDJ-T1-GE3 TTI: SIA112LDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAKSC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 8.8 A | 119 mOhms | - 20 V, 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 15 W | Enhancement | Reel | |||||
Mfr: SIR5623DP-T1-RE3 TTI: SIR5623DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 60 V | 37.1 A | 24 mOhms | - 20 V, 20 V | 2.6 V | 21.8 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: SIRS5100DP-T1-GE3 TTI: SIRS5100DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs MOSFET N-Channel 100V (D-S), PowerPAK SO-8S, 2.5 mohm at 10V | 0In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 100 V | 225 A | 2.5 mOhms | - 20 V, 20 V | 4 V | 68 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors MOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIS126DN-T1-GE3 TTI: SIS126DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWER P AKNC HAN80V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 45.1 A | 10.2 mOhms | - 20 V, 20 V | 2 V | 21.1 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIRA84BDP-T1-GE3 TTI: SIRA84BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 70 A | 7.1 mOhms | - 16 V, 20 V | 1.2 V | 20.7 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3483DDV-T1-GE3 TTI: SI3483DDV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TSOP P CHAN 30V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 31.2 mOhms | - 20 V, 16 V | 2.2 V | 9.5 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3483DDV-T1-BE3 |
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