Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRA90DP-T1-GE3 TTI: SIRA90DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 100A Id Qg 48nC Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 650 uOhms | - 16 V, 20 V | 800 mV | 153 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7111EDN-T1-GE3 TTI: SI7111EDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 60 A | 8.55 mOhms | - 12 V, 12 V | 1.6 V | 56.5 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||
Mfr: SIS415DNT-T1-GE3 TTI: SIS415DNT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.3 mOhms | - 12 V, 12 V | 1.5 V | 180 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR460DP-T1-GE3 TTI: SIR460DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.7 mOhms | - 20 V, 20 V | 1 V | 54 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR460DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | - 25 V, 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | ||||
Mfr: IRFR9214PBF TTI: IRFR9214PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 250V 2.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SI8800EDB-T2-E1 TTI: SI8800EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.8 A | 80 mOhms | - 8 V, 8 V | 400 mV | 8.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4166DY-T1-GE3 TTI: SI4166DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30.5 A | 3.9 mOhms | - 20 V, 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET | Reel | SI4166DY-GE3 | |||
Mfr: SI4943CDY-T1-E3 TTI: SI4943CDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 1 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-E3 | |||
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | - 8 V, 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 5.8 A, 6.8 A | 35.5 mOhms, 45 mOhms | - 20 V, 20 V | 1.2 V, 1.4 V | 11.7 nC, 25 nC | - 55 C | + 150 C | 3 W, 3.1 W | Enhancement | TrenchFET | Reel | SI4599DY-GE3 | ||||
Mfr: SIR166DP-T1-GE3 TTI: SIR166DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3.2 mOhms | - 20 V, 20 V | 1.2 V | 77 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR166DP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | - 30 V, 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHG11N80AE | |||||
Mfr: SIZ260DT-T1-GE3 TTI: SIZ260DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 80 V | 24.6 A, 24.7 A | 24.5 mOhms, 24.7 mOhms | - 20 V, 20 V | 1.1 V | 13.1 nC, 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHF065N60E-GE3 TTI: SIHF065N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 3 V | 74 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
Mfr: SISS92DN-T1-GE3 TTI: SISS92DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 250V Vds; +/-20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | N-Channel | 1 Channel | 250 V | 12.3 A | 173 mOhms | - 20 V, 20 V | 2 V | 16 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SIR880BDP-T1-RE3 TTI: SIR880BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 80V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 70.6 A | 8 mOhms | - 20 V, 20 V | 2.4 V | 66 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7223DN-T1-GE3 TTI: SI7223DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 30 V | 6 A | 26.4 mOhms | - 20 V, 20 V | 1 V | 26.3 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: SI6562CDQ-T1-BE3 TTI: SI6562CDQ-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs TSSOP DUAL CHAN 20V | 0In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 2 Ohms, 6 Ohms | - 12 V, 12 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | Reel | |||||
Mfr: SIR510DP-T1-RE3 TTI: SIR510DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 126A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 126 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2399DS-T1-GE3 TTI: SI2399DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | - 12 V, 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2399DS-T1-BE3 | |||
Mfr: SIA477EDJ-T1-GE3 TTI: SIA477EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 12V 14mOhm@4.5V 12A P-Ch | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11.6 mOhms | - 8 V, 8 V | 1 V | 87 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA519EDJ-T1-GE3 TTI: SIA519EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N- & P- Channel 20V MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | N-Channel, P-Channel | 2 Channel | 20 V | 4.5 A | 40 mOhms, 90 mOhms | - 8 V, 8 V | 600 mV, 500 mV | 3.7 nC, 5.3 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA519EDJ-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel |
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