Vishay - MOSFETs
8,394 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7922DN-T1-GE3 TTI: SI7922DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-GE3 | |||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 70 mOhms | 8 V | 850 mV | 60 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA431DJ-GE3 | ||||
Mfr: IRLR014TRPBF TTI: IRLR014TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: IRFR9014TRPBF TTI: IRFR9014TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 P CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR9014TRPBF-BE3 | ||||
Mfr: SI1441EDH-T1-GE3 TTI: SI1441EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-BE3 SI1417EDH-T1-GE3 | |||
Mfr: SIHFR9120-GE3 TTI: SIHFR9120-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -100V Vds 20V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SIHFR9220-GE3 TTI: SIHFR9220-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs MOSFET P-CHANNEL 60V252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SIR664DP-T1-GE3 TTI: SIR664DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 6 mOhms | 20 V | 1.3 V | 26 nC | - 55 C | + 150 C | 50 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFR210PBF TTI: IRFR210PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 2.6 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR210PBF-BE3 | ||||
Mfr: IRFP22N50APBF TTI: IRFP22N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 500V 22A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 230 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 277 W | Enhancement | Reel | |||||
Mfr: IRFPF50PBF TTI: IRFPF50PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRFP | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 6.7 A | 1.6 Ohms | 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Reel | |||||
Mfr: SIS438DN-T1-GE3 TTI: SIS438DN-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 16 A | 9.5 mOhms | 20 V | 1 V | 23 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS438DN-GE3 | |||
Mfr: SUD09P10-195-GE3 TTI: SUD09P10-195-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V 195mOhms@ 10V -8.8A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 8.8 A | 195 mOhms | 20 V | 2.5 V | 23.2 nC | - 55 C | + 150 C | 113.6 W | Enhancement | TrenchFET | Reel | SUD09P10-195-BE3 | |||
Mfr: SIRA02DP-T1-GE3 TTI: SIRA02DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 1.65 mOhms | - 16 V, 20 V | 1.1 V | 117 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA02DP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
Mfr: SI7212DN-T1-E3 TTI: SI7212DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 6.8 A | 36 mOhms | 12 V | 600 mV | 11 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7212DN-E3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | ||||
Mfr: SI7922DN-T1-E3 TTI: SI7922DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-T1 | |||
Mfr: IRFB11N50APBF TTI: IRFB11N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 500V 11A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | IRFB11N50APBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SI4386DY-T1-GE3 TTI: SI4386DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V 16A 3.1W 7.0mohm @ 10V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 16 A | 7 mOhms | 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4386DY-GE3 | ||||
Mfr: SI4122DY-T1-GE3 TTI: SI4122DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 25V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | |||
Mfr: IRFR9110PBF TTI: IRFR9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 3.1A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: SI7386DP-T1-E3 TTI: SI7386DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30 Volt 19 Amp 5W | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 19 A | 7 mOhms | 20 V | 2.5 V | 11.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI7386DP-E3 |