Vishay - MOSFETs
8,354 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI8802DB-T2-E1 TTI: SI8802DB-T2-E1 Vishay / Siliconix Availability: 291,000In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | 291,000In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 3.5 A | 54 mOhms | 5 V | 350 mV | 4.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 4,800In StockMOSFETs 100V N-CH HEXFET D2-PAK | 4,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Tube | |||||
Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
Mfr: SI7223DN-T1-GE3 TTI: SI7223DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 30 V | 6 A | 26.4 mOhms | 20 V | 1 V | 26.3 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH 1000V HEXFET MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SI7119DN-T1-E3 TTI: SI7119DN-T1-E3 Vishay Semiconductors Availability: 72,000In Stock102,000 On Order Expected MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 72,000In Stock102,000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-E3 | |||
Mfr: SIA459EDJ-T1-GE3 TTI: SIA459EDJ-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 12,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 9 A | 28 mOhms | 12 V | 1.2 V | 30 nC | - 50 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3421DV-T1-GE3 TTI: SI3421DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 19.2 mOhms | 20 V | 1 V | 46 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 55,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 55,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: IRFP460APBF TTI: IRFP460APBF Vishay Semiconductors Availability: 500In StockMOSFETs N-CH 500V HEXFET MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 30 V | 2 V | 105 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V P-CH HEXFET MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 2,000In Stock1,000 On Order Expected 29-Oct-26 MOSFETs N-Chan 100V 5.6 Amp | 2,000In Stock1,000 On Order Expected 29-Oct-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 16,000In StockMOSFETs RECOMMENDED ALT SUD1 | 16,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: IRFP9140PBF TTI: IRFP9140PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 100V 21A P-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 21 A | 200 mOhms | 20 V | 2 V | 61 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | |||||
Mfr: IRFRC20TRPBF TTI: IRFRC20TRPBF Vishay Semiconductors Availability: 10,000In StockMOSFETs TO252 600V 2A N-CH MOSFET | 10,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFRC20TRPBF-BE3 | ||||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 | |||
Mfr: SIR876ADP-T1-GE3 TTI: SIR876ADP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 40 A | 9 mOhms | 20 V | 1.5 V | 49 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR876ADP-GE3 | |||
Mfr: SISS98DN-T1-GE3 TTI: SISS98DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8S | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 14.1 A | 85 mOhms | 20 V | 2 V | 18.2 nC | - 55 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIRS4600DP-T1-RE3 TTI: SIRS4600DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs POWRPK N CHAN 60V | 6,000In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 60 V | 334 A | 1.2 mOhms | 20 V | 4 V | 81 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: SIA975DJ-T1-GE3 TTI: SIA975DJ-T1-GE3 Vishay Semiconductors Availability: 42,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 42,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | |||
Mfr: SIHK075N60EF-T1GE3 TTI: SIHK075N60EF-T1GE3 Vishay Availability: 8,000In StockMOSFETs TOLL 600V 40A E SERIES | 8,000In Stock | Si | 650 V | 33 A | 61 mOhms | 30 V | 5 V | 72 nC | - 55 C | + 150 C | 192 W | Reel | ||||||||||
Mfr: SI1469DH-T1-E3 TTI: SI1469DH-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 SI1469DH-E3 |