Vishay - MOSFETs
8,329 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI5935CDC-T1-GE3 TTI: SI5935CDC-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 9,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | - 8 V, 8 V | 400 mV | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-GE3 SIR814DP-T1-GE3 | |||
Mfr: SIB457EDK-T1-GE3 TTI: SIB457EDK-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-75 | 3,000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 20 V | 9 A | 29 mOhms | - 8 V, 8 V | 1 V | 44 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB457EDK-GE3 | |||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: IRFR9024TRPBF TTI: IRFR9024TRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO252 60V 8.8A P-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9024TRPBF-BE3 | ||||
Mfr: SIA459EDJ-T1-GE3 TTI: SIA459EDJ-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 12,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 9 A | 28 mOhms | - 12 V, 12 V | 1.2 V | 30 nC | - 50 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 100,000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 100,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: SI4804CDY-T1-GE3 TTI: SI4804CDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V 8.0A 3.1W 22mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8 A | 22 mOhms | - 20 V, 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4804CDY-GE3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 24,000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | - 8 V, 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SI4101DY-T1-GE3 TTI: SI4101DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.7 A | 5 mOhms | - 20 V, 20 V | 2.5 V | 203 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR1N60ATRPBF TTI: IRFR1N60ATRPBF Vishay Semiconductors Availability: 36,000In StockMOSFETs N-Chan 600V 1.4 Amp | 36,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | - 30 V, 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF-BE3 | ||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 16,000In StockMOSFETs RECOMMENDED ALT SUD1 | 16,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 9,000In StockMOSFETs 200V P-CH HEXFET MOSFET | 9,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 765,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 765,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: SI3421DV-T1-GE3 TTI: SI3421DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 1 V | 46 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 55,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 55,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | - 20 V, 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SIHFR220-GE3 TTI: SIHFR220-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SI2303CDS-T1-GE3 TTI: SI2303CDS-T1-GE3 Vishay Semiconductors Availability: 354,000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 354,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | |||
Mfr: IRFBE30PBF TTI: IRFBE30PBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 800V 4.1A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF-BE3 | ||||
Mfr: SI3457CDV-T1-GE3 TTI: SI3457CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | |||
Mfr: SI3483CDV-T1-GE3 TTI: SI3483CDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | - 20 V, 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3483CDV-T1-BE3 SI3483CDV-GE3 | |||
Mfr: IRF840APBF TTI: IRF840APBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 500V 8A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF-BE3 | ||||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-Chan 800V 4.1 Amp | 1,000In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SUP57N20-33-E3 TTI: SUP57N20-33-E3 Vishay Semiconductors Availability: 500In StockMOSFETs 200V 57A 300W | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 57 A | 27 mOhms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI1469DH-T1-E3 TTI: SI1469DH-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 SI1469DH-E3 |