Vishay - MOSFETs
8,352 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SI2309CDS-T1-E3 TTI: SI2309CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-E3 | |||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
Mfr: SIS438DN-T1-GE3 TTI: SIS438DN-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 16 A | 9.5 mOhms | 20 V | 1 V | 23 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS438DN-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | ||||
Mfr: SI5515CDC-T1-E3 TTI: SI5515CDC-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | 8 V | 400 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 88 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SIHP22N60EF-GE3 TTI: SIHP22N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Nch 600V Vds 30V Vgs TO-220AB; w/diode | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 182 mOhms | 30 V | 2 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SI7922DN-T1-E3 TTI: SI7922DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-T1 | |||
Mfr: SI7148DP-T1-E3 TTI: SI7148DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | ||||
Mfr: SIRA02DP-T1-GE3 TTI: SIRA02DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 1.65 mOhms | - 16 V, 20 V | 1.1 V | 117 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA02DP-GE3 | |||
Mfr: SI2336DS-T1-GE3 TTI: SI2336DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.2 A | 42 mOhms | 8 V | 1 V | 10 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2336DS-T1-BE3 SI2336DS-GE3 | |||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 70 mOhms | 8 V | 850 mV | 60 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA431DJ-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 4 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 20 A | 6 mOhms | 16 V | 1 V | 95 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4114DY-GE3 | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: IRF840STRLPBF TTI: IRF840STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 500V 8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 3 mOhms | 20 V | 1 V | 36 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7336ADP-GE3 | ||||
Mfr: SI7212DN-T1-E3 TTI: SI7212DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 6.8 A | 36 mOhms | 12 V | 600 mV | 11 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7212DN-E3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 | ||||
Mfr: IRFPF50PBF TTI: IRFPF50PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRFP | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 6.7 A | 1.6 Ohms | 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Reel | |||||
Mfr: IRF9Z34STRRPBF TTI: IRF9Z34STRRPBF Vishay / Siliconix Availability: 0In StockMOSFETs TO263 P CHAN 60V | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
Mfr: SI7386DP-T1-E3 TTI: SI7386DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30 Volt 19 Amp 5W | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 19 A | 7 mOhms | 20 V | 2.5 V | 11.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI7386DP-E3 |