Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors MOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | - 8 V, 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | - 12 V, 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 16 V | 5 V | 17 nC | - 55 C | + 150 C | 17.9 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIDR570EP-T1-RE3 TTI: SIDR570EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs SOT669 150V 90.9A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 90.9 A | 7.9 mOhms | - 20 V, 20 V | 4 V | 35.1 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2333CDS-T1-E3 | |||||
Mfr: SI1480BDH-T1-GE3 TTI: SI1480BDH-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 80 V (D-S) MOSFET PowerPAK SO-8, 1.8 mohm a. 10V 1.7 mohm a. 7.5V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.38 A | 212 mOhms | - 20 V, 20 V | 3 V | 3.9 nC | - 55 C | + 150 C | 2.6 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 144 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 73 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SIHB100N65E-GE3 TTI: SIHB100N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 | N-Channel | 1 Channel | 650 V | 30 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIHFR120-GE3 TTI: SIHFR120-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 100V 7.7A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SIHF9630STRL-GE3 TTI: SIHF9630STRL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -200V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
Mfr: SIR662DP-T1-GE3 TTI: SIR662DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 2.7mOhm@10V 60A N-Ch MV T-FET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.2 mOhms | - 20 V, 20 V | 1 V | 96 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR662DP-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | ||||||
Mfr: SIRA10BDP-T1-GE3 TTI: SIRA10BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 3.6 mOhms | - 16 V, 20 V | 1.2 V | 24.1 nC | - 55 C | + 150 C | 43 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS72DN-T1-GE3 TTI: SISS72DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 150 V | 25.5 A | 42 mOhms | - 20 V, 20 V | 2 V | 22 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, ThunderFET, PowerPAK | Reel | ||||
Mfr: SIHA240N60E-GE3 TTI: SIHA240N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds; +/-30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
Mfr: SIHP240N60E-GE3 TTI: SIHP240N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds; +/-30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SISH106DN-T1-GE3 TTI: SISH106DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds; +/-12V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 600 mV | 27 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR626LDP-T1-RE3 TTI: SIR626LDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds; 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 186 A | 1.5 mOhms | - 20 V, 20 V | 1 V | 135 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISH615ADN-T1-GE3 TTI: SISH615ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds; 12V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | P-Channel | 1 Channel | 20 V | 35 A | 4.4 mOhms | - 12 V, 12 V | 1.5 V | 183 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | - 30 V, 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | ||||||
Mfr: SIDR870ADP-T1-GE3 TTI: SIDR870ADP-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 10.5 mOhms | - 20 V, 20 V | 3 V | 25.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRA01DP-T1-GE3 TTI: SIRA01DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.9 mOhms | - 16 V, 20 V | 2.2 V | 56 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUP90220E-GE3 TTI: SUP90220E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: SI8823EDB-T2-E1 TTI: SI8823EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.7 A | 77 mOhms | - 8 V, 8 V | 800 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SIHH20N50E-T1-GE3 TTI: SIHH20N50E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 500 V | 22 A | 128 mOhms | - 30 V, 30 V | 2 V | 84 nC | - 55 C | + 150 C | 174 W | Enhancement | Reel |
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