Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SISS65DN-T1-GE3 TTI: SISS65DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds -/+20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 94 A | 4.6 mOhms | - 20 V, 20 V | 2.3 V | 138 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | - 20 V, 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 201 mOhms | - 30 V, 30 V | 3 V | 21 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIRA14BDP-T1-GE3 TTI: SIRA14BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 21 A | 5.38 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | |||||
Mfr: SISF04DN-T1-GE3 TTI: SISF04DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 108 A | 4 mOhms | - 12 V, 16 V | 2.3 V | 40 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SIHP35N60EF-GE3 TTI: SIHP35N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 32 A | 97 mOhms | - 30 V, 30 V | 2 V | 134 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 59.6 A | 7.4 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIR826BDP-T1-RE3 TTI: SIR826BDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 80.8 A | 5.1 mOhms | - 20 V, 20 V | 2 V | 69 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG80N60EF-GE3 TTI: SIHG80N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 80 A | 32 mOhms | - 30 V, 30 V | 2 V | 400 nC | - 55 C | + 150 C | 520 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Reel | ||||||
Mfr: SIR608DP-T1-RE3 TTI: SIR608DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 45V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 45 V | 208 A | 1.2 mOhms | - 16 V, 20 V | 1.1 V | 167 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5.5 A | 133 mOhms | - 20 V, 20 V | 4 V | 4.4 nC | - 55 C | + 150 C | 5 mW | Enhancement | Reel | ||||||
Mfr: SIHA15N65E-GE3 TTI: SIHA15N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 96 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 21 A | 160 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: SUD50P04-08-BE3 TTI: SUD50P04-08-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CHANNEL 40V (D-S) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 50 A | 8.1 mOhms | - 20 V, 20 V | 2.5 V | 159 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel | SUD50P04-08-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | IRF530PBF | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 32.7 mOhms | - 12 V, 12 V | 1.5 V | 21 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3407DV-T1-GE3 | |||||
Mfr: SIHB125N60EF-GE3 TTI: SIHB125N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs TO263 600V 25A N-CH MOSFET | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel |
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