ROHM Semiconductor - MOSFETs
2,076 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 80 A | 7.5 mOhms | 20 V | 2.5 V | 22 nC | - 55 C | + 175 C | 76 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 40 V | 40 A | 5 mOhms | 20 V | 2.5 V | 19.1 nC | - 55 C | + 175 C | 62 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 80 A | 7.5 mOhms | 20 V | 2.5 V | 22 nC | - 55 C | + 175 C | 76 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 200 V | 20 A | 310 mOhms | - 30 V, 30 V | 5 V | 40 nC | - 55 C | + 150 C | 48 W | Enhancement | Bulk | ||||||
0In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 30 V | 4.5 A | 43 mOhms | - 12 V, 12 V | 1.5 V | 7.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E045TN | |||||
0In Stock | Si | SMD/SMT | DFN-7 | N-Channel | 1 Channel | 60 V | 12 A | 30 mOhms | 20 V | 4 V | 7.5 nC | - 55 C | + 150 C | 23 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | HPLF-5 | P-Channel | 30 V | 85 A | 10.3 mOhms | - 20 V, 5 V | 2.5 V | 38 nC | - 55 C | + 175 C | 75 W | Enhancement | AEC-Q101 | Reel | ||||||
Mfr: AG140FGS4FRATCB TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 40V 120A, HPLF5060T5LSAH, Power MOSFET for Automotive, AEC-Q101 qualified. Ideal for Automotive Systems | 0In Stock | Si | SMD/SMT | HPLF-5 | N-Channel | 1 Channel | 40 V | 120 A | 1.4 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | AEFC-Q101 | Reel | ||||
Mfr: AG045FLS4FRATCB TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 60V 120A, HPLF5060T5LSAH, Power MOSFET for Automotive : AG045FLS4FRA is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for Automotive Systems. | 0In Stock | Si | SMD/SMT | HPLF-5 | N-Channel | 1 Channel | 60 V | 120 A | 2.6 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 175 C | 150 W | Enhancement | AEFC-Q101 | Reel | ||||
Mfr: RQ3L120BJFRATCB TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive | 0In Stock | Si | SMD/SMT | HSMT-8 | P-Channel | 1 Channel | 60 V | 12 A | 106 mOhms | - 20 V, 5 V | 2.5 V | 15.7 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 30 V | 78 A | 8.5 mOhms | - 20 V, 5 V | 2.5 V | 52 nC | - 55 C | + 175 C | 77 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 2 A | 200 mOhms | - 20 V, 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | HSMT-8AG | P-Channel | 1 Channel | 60 V | 27 A | 47 mOhms | - 20 V, 5 V | 2.5 V | 34 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 2 Channel | 100 V | 13 A | 57 mOhms | - 20 V, 20 V | 2.5 V | 6.7 nC | - 55 C | + 150 C | 14 W | Enhancement | Reel | ||||||
Mfr: RD3P06BBKHRBTL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 100V 59A, TO-252 (DPAK), Power MOSFET for Automotive | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 59 A | 15.8 mOhms | 2.5 V | 17.3 nC | - 55 C | + 175 C | 76 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 1 Channel | 80 V | 65 A | 8.3 mOhms | - 20 V, 20 V | 4 V | 23 nC | - 55 C | + 150 C | 59 W | Enhancement | Reel | ||||||
Mfr: RJ1G04BBGTL1 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 40V 130A, TO-263AB, Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AB-3 | N-Channel | 1 Channel | 40 V | 130 A | 3.1 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: RJ1N10BBHTL1 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 80V 235A, TO-263AB, Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AB-3 | N-Channel | 1 Channel | 80 V | 235 A | 2 mOhms | - 20 V, 20 V | 4 V | 185 nC | - 55 C | + 150 C | 189 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 68 A | 13.1 mOhms | - 20 V, 5 V | 2.5 V | 82 nC | - 55 C | + 175 C | 77 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 80 A | 7.6 mOhms | 20 V | 4 V | 22 nC | - 55 C | + 175 C | 76 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 40 A | 24 mOhms | - 20 V, 5 V | 2.5 V | 27.6 nC | - 55 C | + 175 C | 53 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 40 V | 225 A | 1.2 mOhms | 20 V | 4 V | 52 nC | - 55 C | + 175 C | 125 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247G-3 | N-Channel | 1 Channel | 800 V | 11 A | 450 mOhms | 30 V | 4.5 V | 37 nC | - 55 C | + 150 C | 139 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247G-3 | N-Channel | 1 Channel | 800 V | 19 A | 265 mOhms | 30 V | 4.5 V | 65 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TSMT-8 | N-Channel | 2 Channel | 100 V | 2 A | 202 mOhms | - 20 V, 20 V | 2.5 V | 2.8 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel |
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