ROHM Semiconductor - MOSFETs
2,076 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 13 A | 8.5 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RS3E130AT | |||||
0In Stock | Si | SMD/SMT | SOT-457T-6 | P-Channel | 1 Channel | 30 V | 2.5 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 4.4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RSQ025P03HZG | ||||
0In Stock | Si | SMD/SMT | SOT-563-6 | N-Channel | 2 Channel | 20 V | 200 mA | 1.2 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | EM6K7 | ||||||
Mfr: R8008ANJFRGTL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 800V Vdss 8A ID TO-263(D2PAK); LPTS | 0In Stock | Si | SMD/SMT | TO-263S-3 | N-Channel | 1 Channel | 800 V | 8 A | 1.03 Ohms | - 30 V, 30 V | 5 V | 38 nC | - 55 C | + 150 C | 195 W | Enhancement | AEC-Q101 | Reel | R8008ANJFRG | |||
0In Stock | Si | SMD/SMT | DFN-2020-8 | N-Channel | 1 Channel | 30 V | 6 A | 37 mOhms | - 12 V, 12 V | 1.5 V | 4 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RF4E060AJ | |||||
0In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 30 V | 4 A | 50 mOhms | - 20 V, 20 V | 2.5 V | 3.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E040XN | |||||
Mfr: RQ3L270BLFRATCB TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive | 0In Stock | Si | SMD/SMT | HSMT-8AG | N-Channel | 1 Channel | 60 V | 27 A | 14.7 mOhms | - 20 V, 20 V | 4 V | 15 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 2 Channel | 100 V | 6.5 A | 210 mOhms | - 20 V, 20 V | 4 V | 3.7 nC | - 55 C | + 150 C | 13 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 40 V | 80 A | 2.2 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 175 C | 142 W | Enhancement | Reel | ||||||
Mfr: R6010YNXC7G TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs 600V 7A TO-220FM, High-speed switching Power MOSFET | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 7 A | 390 mOhms | - 30 V, 30 V | 6 V | 15 nC | - 55 C | + 150 C | 47 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 80 V | 105 A | 4.4 mOhms | - 20 V, 20 V | 4 V | 46 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 80 V | 160 A | 2.6 mOhms | - 20 V, 20 V | 4 V | 73 nC | - 55 C | + 150 C | 160 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 196 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 231 W | Enhancement | Tube | R6020ENZ4 | |||||
0In Stock | Si | SMD/SMT | DFN-2020-8 | P-Channel | 1 Channel | 100 V | 2.5 A | 260 mOhms | - 20 V, 20 V | 2.5 V | 19.7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247G-3 | N-Channel | 1 Channel | 600 V | 66 A | 165 mOhms | - 30 V, 30 V | 6 V | 33 nC | - 55 C | + 150 C | 205 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 183 A | 60 mOhms | - 30 V, 30 V | 6 V | 76 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: R6027YNZ4C13 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 600V 27A, TO-247G, Power MOSFET: R6027YNZ4 is a power MOSFET with Low on - resistance, suitable for switching. | 0In Stock | Si | Through Hole | TO-247G-3 | N-Channel | 1 Channel | 600 V | 27 A | 135 mOhms | - 30 V, 30 V | 6 V | 40 nC | - 55 C | + 150 C | 245 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 100 V | 100 A | 5.9 mOhms | - 20 V, 20 V | 4 V | 45 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | RS6P100BH | |||||
0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 11 A | 340 mOhms | - 20 V, 20 V | 4 V | 32 nC | - 55 C | + 150 C | 53 W | Enhancement | Reel | R6011ENXC7G | |||||
Mfr: RU1E002SPTCL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs 4V Drive Pch MOSFET Drive Pch | 0In Stock | Si | SMD/SMT | SOT-323FL-3 | P-Channel | 1 Channel | 30 V | 250 mA | 1.4 Ohms | - 20 V, 20 V | 2.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | RU1E002SP | |||||
0In Stock | Si | SMD/SMT | HSML3030L-10 | N-Channel | 2 Channel | 30 V | 7 A, 11 A | 13.3 mOhms, 17.9 mOhms | - 20 V, - 12 V, 12 V, 20 V | 2.5 V | 11.1 nC, 20.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | HS8K11 | |||||
Mfr: RS1E180BNTB TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs 4.5V Drive Nch MOSFET | 0In Stock | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.9 mOhms | - 20 V, 20 V | 2.5 V | 46 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | RS1E180BN | ||||
Mfr: RAL025P01TCR TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs 1.5V Drive Pch MOSFET | 0In Stock | Si | SMD/SMT | SOT-363T-3 | P-Channel | 1 Channel | 12 V | 2.5 A | 62 mOhms | - 8 V, 8 V | 1 V | 16 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RAL025P01 | ||||
0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 200 V | 16 A | 180 mOhms | - 30 V, 30 V | 5.25 V | 26 nC | - 55 C | + 150 C | 43 W | Enhancement | Bulk | ||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 2 A | 240 mOhms | - 12 V, 12 V | 1.5 V | 5 nC | + 150 C | 2 W | Enhancement | Reel | RJP020N06 |
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