SP - BID - IGBTs
4 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: BIDW40N65ES5 TTI: Not Assigned Bourns Availability: 0In StockIGBTs IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L | 0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.35 V | 20 V | 80 A | 230 W | - 40 C | + 175 C | BID | Tube | |||
Mfr: BIDW40N65H5 TTI: Not Assigned Bourns Availability: 0In StockIGBTs IGBT Discrete 650V, 40A, High speed switching in TO-247-3L | 0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.65 V | 20 V | 80 A | 300 W | - 40 C | + 175 C | BID | Tube | |||
Mfr: BIDW75N65EH5 TTI: Not Assigned Bourns Availability: 0In StockIGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L | 0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.65 V | 20 V | 150 A | 394 W | - 40 C | + 175 C | BID | Tube | |||
Mfr: BIDW75N65ES5 TTI: Not Assigned Bourns Availability: 0In StockIGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L | 0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.42 V | 20 V | 150 A | 394 W | - 40 C | + 175 C | BID | Tube |