H-32 - IGBTs
6 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.7 kV | 3.3 V | - 20 V, 20 V | 75 A | 350 W | - 55 C | + 150 C | IXGH32N170 | Tube | ||||
Not Available Online | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | 2.35 V | - 20 V, 20 V | 75 A | 300 W | - 55 C | + 150 C | IXGH32N120 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.7 kV | 5 V | - 20 V, 20 V | 32 A | 350 W | - 55 C | + 150 C | IXGH32N170 | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 3 kV | 2.8 V | - 20 V, 20 V | 80 A | 400 W | - 55 C | + 150 C | Tube | |||||
Not Available Online | - 20 V, 20 V | Tube | |||||||||||||||
Not Available Online | Si | TO-247AD-3 | Through Hole | Single | 900 V | - 20 V, 20 V | - 55 C | + 150 C | IXGH32N90 | Tube |