NC - GaN FETs
6 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Maximum Operating Frequency | Minimum Operating Frequency | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | SMD/SMT | VQFN-46 | 1 Channel | 650 V | 68.8 A | 70 mOhms | - 40 C | + 105 C | Enhancement | Nano Cap; EcoGaN | 2 MHz | Si | ||||||||||
Not Available Online | SMD/SMT | TOLL-8N | N-Channel | 1 Channel | 650 V | 27 A | 98 mOhms | - 10 V to + 6.5 V | 1.5 V | 5.2 nC | - 55 C | + 150 C | 159 W | Enhancement | GaN | |||||||
Not Available Online | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 650 V | 20 A | 98 mOhms | - 10 V, + 6 V | 1.45 V | 5.2 nC | + 150 C | 56 W | Enhancement | EcoGan | GaN | |||||||
Not Available Online | SMD/SMT | DFN-8080AK-8 | N-Channel | 1 Channel | 650 V | 11 A | 195 mOhms | - 10 V, + 6 V | 1.45 V | 2.7 nC | + 150 C | 46.3 W | Enhancement | EcoGan | GaN | |||||||
Not Available Online | SMD/SMT | DFN8080CK-8 | N-Channel | 1 Channel | 650 V | 14.5 A | 182 mOhms | - 10 V, + 6.5 V | 2.5 V | 2.8 nC | - 55 C | + 150 C | 91 W | Enhancement | GaN | |||||||
Not Available Online | SMD/SMT | DFN8080CK-8 | N-Channel | 1 Channel | 650 V | 27.2 A | 98 mOhms | - 10 V, + 6.5 V | 2.5 V | 4.7 nC | - 55 C | + 150 C | 169 W | Enhancement | GaN |