Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7540ADP-T1-GE3 TTI: SI7540ADP-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 8 A | 15 mOhms, 28 mOhms | - 12 V, 12 V | 1.4 V | 18 nC, 32 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8483DB-T2-E1 TTI: SI8483DB-T2-E1 Vishay Semiconductors MOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 12 V | 16 A | 22 mOhms | - 10 V, 10 V | 800 mV | 65 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | - 20 V, 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 150 V | 1.4 A | 750 mOhms | - 20 V, 20 V | 2 V | 12.2 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3437DV-T1-BE3 SI3437DV-E3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 85 A | 19 mOhms | - 20 V, 20 V | 2 V | 76 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | IRF9530PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | - 20 V, 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-T1 | ||||
Mfr: IRF9540STRLPBF TTI: IRF9540STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 19 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SUD50P04-08-GE3 TTI: SUD50P04-08-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 50A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 50 A | 8.1 mOhms | - 20 V, 20 V | 2.5 V | 159 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel | SUD50P04-08-BE3 | |||
Mfr: SI7415DN-T1-GE3 TTI: SI7415DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | - 20 V, 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-GE3 | |||
Mfr: SI7461DP-T1-E3 TTI: SI7461DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 14.4 A | 14.5 mOhms | - 20 V, 20 V | 3 V | 121 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7461DP-E3 | |||
Mfr: SI4143DY-T1-GE3 TTI: SI4143DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.3 A | 9.2 mOhms | - 25 V, 25 V | 2.5 V | 167 nC | - 55 C | + 150 C | 6 W | Enhancement | Reel | |||||
Mfr: IRF9520PBF TTI: IRF9520PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 100V 6.8A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRF9520PBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF-BE3 | |||||
Mfr: SI2365EDS-T1-GE3 TTI: SI2365EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S | |||
Mfr: SIR112DP-T1-RE3 TTI: SIR112DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 133 A | 1.96 mOhms | - 16 V, 20 V | 1.1 V | 59 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
Mfr: SI3407DV-T1-GE3 TTI: SI3407DV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 32.7 mOhms | - 12 V, 12 V | 1.5 V | 21 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3407DV-T1-BE3 SI3407DV-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | ||||
Mfr: IRFZ48SPBF TTI: IRFZ48SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 60V Power MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | - 25 V, 25 V | 2.5 V | 98 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7149DP-GE3 | ||||
Mfr: SI4532CDY-T1-GE3 TTI: SI4532CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 N&P PAIR | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 30 V | 4.3 A, 6 A | 47 mOhms, 89 mOhms | - 20 V, 20 V | 1 V | 6 nC, 7.8 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI4532CDY-GE3 |
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