Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SI2303CDS-T1-GE3 TTI: SI2303CDS-T1-GE3 Vishay Semiconductors Availability: 354,000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 354,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | |||
Mfr: SI4816BDY-T1-GE3 TTI: SI4816BDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816DY-T1-E3-S | |||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-Chan 800V 4.1 Amp | 1,000In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRF840APBF TTI: IRF840APBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 500V 8A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF-BE3 | ||||
Mfr: SUP57N20-33-E3 TTI: SUP57N20-33-E3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 200V 57A 300W | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 57 A | 27 mOhms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI3457CDV-T1-GE3 TTI: SI3457CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | |||
Mfr: SI5515CDC-T1-GE3 TTI: SI5515CDC-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 9,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | - 8 V, 8 V | 400 mV, 800 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-GE3 | |||
Mfr: IRF730ASTRLPBF TTI: IRF730ASTRLPBF Vishay Semiconductors Availability: 800In StockMOSFETs N-CH 400V HEXFET MOSFET D2-PA | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 2 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
Mfr: SI1442DH-T1-GE3 TTI: SI1442DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V Vds 8V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 12 V | 4 A | 20 mOhms | - 8 V, 8 V | 1 V | 33 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1442DH-T1-BE3 SI1442DH-GE3 | |||
Mfr: IRFP460PBF TTI: IRFP460PBF Vishay Semiconductors Availability: 10,000In StockMOSFETs TO247 500V 20A N-CH MOSFET | 10,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | - 20 V, 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: SI4136DY-T1-GE3 TTI: SI4136DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 46 A | 2 mOhms | - 20 V, 20 V | 1 V | 110 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4136DY-GE3 | |||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH SINGLE 1KV TO-220 | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 50,000In StockMOSFETs 100V Vds 20V Vgs SO-8 | 50,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: SI2356DS-T1-GE3 TTI: SI2356DS-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs 40V Vds 12V Vgs SOT-23 | 33,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | |||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: SIS782DN-T1-GE3 TTI: SIS782DN-T1-GE3 Vishay Semiconductors Availability: 108,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 108,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 30.5 nC | - 50 C | + 150 C | 41 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS782DN-GE3 | |||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH SINGLE 500V TO247 | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFZ24SPBF TTI: IRFZ24SPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs 60V 100mOhm@10V 17A N-Ch | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
Mfr: SISS71DN-T1-GE3 TTI: SISS71DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -100V Vds 20V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 23 A | 47 mOhms | - 20 V, 20 V | 2.5 V | 30 nC | - 50 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | - 20 V, 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: SI2328DS-T1-E3 TTI: SI2328DS-T1-E3 Vishay Semiconductors Availability: 75,000In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 75,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-E3 | |||
3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel