Vishay Semiconductors - MOSFETs
2,253 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SISA04DN-T1-GE3 TTI: SISA04DN-T1-GE3 Vishay Semiconductors MOSFETs For New Design See: 78-SISHA04DN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SISA04DN-GE3 | |||
Mfr: SIRA02DP-T1-GE3 TTI: SIRA02DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 1.65 mOhms | - 16 V, 20 V | 1.1 V | 117 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA02DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | ||||
Mfr: SI1441EDH-T1-GE3 TTI: SI1441EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-BE3 SI1417EDH-T1-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 8.8 A | 195 mOhms | 20 V | 2.5 V | 23.2 nC | - 55 C | + 150 C | 113.6 W | Enhancement | TrenchFET | Reel | SUD09P10-195-BE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 35 A | 10 mOhms | 20 V | 2.8 V | 47.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7143DP-GE3 | ||||
Mfr: SI2336DS-T1-GE3 TTI: SI2336DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.2 A | 42 mOhms | 8 V | 1 V | 10 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2336DS-T1-BE3 SI2336DS-GE3 | |||
Mfr: SIR140DP-T1-RE3 TTI: SIR140DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 100 A | 900 uOhms | - 16 V, 20 V | 1 V | 113 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | ||||||
Mfr: SIHG47N60AE-GE3 TTI: SIHG47N60AE-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 43 A | 56 mOhms | 30 V | 4 V | 121 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel | |||||
Mfr: SISF02DN-T1-GE3 TTI: SISF02DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 25V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 64.9 A | 5.3 mOhms | 20 V | 4 V | 25.3 nC | - 55 C | + 150 C | 71.4 W | Enhancement | Reel | ||||||
Mfr: SISS588DN-T1-GE3 TTI: SISS588DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWER P AKNC HAN80V | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 80 V | 58.1 A | 7.2 mOhms | 20 V | 4 V | 18.7 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: SISA18BDN-T1-GE3 TTI: SISA18BDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8PT | N-Channel | 1 Channel | 30 V | 60 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 6.2 nC | - 55 C | + 150 C | 36.8 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: SIHB080N60E-GE3 TTI: SIHB080N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 650V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | |||||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 3.6A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 | ||||
Mfr: IRFR9120TRLPBF TTI: IRFR9120TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 5.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9120TRLPBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 46 A | 55 mOhms | 20 V | 2 V | 230 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||||
Mfr: SUM40010EL-GE3 TTI: SUM40010EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.6 mOhms | 20 V | 1.2 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIJA54DP-T1-GE3 TTI: SIJA54DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 60 A | 2.35 mOhms | - 16 V, 20 V | 2.4 V | 104 nC | - 55 C | + 150 C | 36.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA449DJ-T1-GE3 TTI: SIA449DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | P-Channel | 1 Channel | 30 V | 12 A | 15.5 mOhms | 12 V | 1.5 V | 72 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7812DN-T1-E3 TTI: SI7812DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-E3 |