Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | - 20 V, 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | ||||||
Mfr: SIZF5302DT-T1-RE3 TTI: SIZF5302DT-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs PWRPR N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAIR 3 x 3FS-12 | N-Channel | 2 Channel | 30 V | 100 A | 3.2 mOhms | - 12 V, 16 V | 2 V | 6.7 nC | - 55 C | + 150 C | 48.1 W | Enhancement | Reel | |||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors MOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHH105N60EF-T1GE3 TTI: SIHH105N60EF-T1GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600volts 26amp | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 600 V | 26 A | 91 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 174 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPak-9 | N-Channel | 1 Channel | 600 V | 48 A | 49 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SIR622DP-T1-GE3 TTI: SIR622DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI5922DU-T1-GE3 TTI: SI5922DU-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 30V Vds 4.7nC Qg Typ | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 19.2 mOhms | - 16 V, 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 10.4 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 4 V | 131 nC | - 55 C | + 150 C | 329 W | Enhancement | Reel | ||||||
Mfr: SIA430DJT-T1-GE3 TTI: SIA430DJT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs Thin PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 20 V | 12 A | 13.5 mOhms | - 20 V, 20 V | 1 V | 18 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 18 mOhms | - 25 V, 25 V | 3 V | 43 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7121DN-GE3 | ||||
Mfr: SIHB30N60E-GE3 TTI: SIHB30N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 2 V | 16 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Reel | ||||||
Mfr: SI4456DY-T1-E3 TTI: SI4456DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 33A 7.8W 3.8mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 33 A | 3.8 mOhms | - 20 V, 20 V | 1.5 V | 122 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4456DY-E3 | |||
Mfr: SUP70101EL-GE3 TTI: SUP70101EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 120 A | 11.4 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | ||||||
Mfr: SIR698DP-T1-GE3 TTI: SIR698DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 7.5 A | 195 mOhms | - 20 V, 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR698DP-GE3 | |||
Mfr: IRFI530GPBF TTI: IRFI530GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 100V 9.7A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.7 A | 160 mOhms | - 20 V, 20 V | 2 V | 33 nC | - 55 C | + 175 C | 42 W | Enhancement | Reel | |||||
Mfr: SUM110P04-04L-E3 TTI: SUM110P04-04L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SUM1 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 4.2 mOhms | - 20 V, 20 V | 1 V | 235 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P04-04L | |||
Mfr: SIS435DNT-T1-GE3 TTI: SIS435DNT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8T | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 30 A | 4.4 mOhms | - 8 V, 8 V | 900 mV | 180 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI8406DB-T2-E1 TTI: SI8406DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | N-Channel | 1 Channel | 20 V | 16 A | 33 mOhms | - 8 V, 8 V | 400 mV | 20 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 60 V | 165 A | 1.75 mOhms | - 20 V, 20 V | 3.5 V | 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: SIRC18DP-T1-GE3 TTI: SIRC18DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 850 uOhms | - 16 V, 20 V | 1 V | 111 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4124DY-T1-GE3 TTI: SI4124DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 7.5 mOhms | - 20 V, 20 V | 1 V | 77 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4124DY-GE3 |
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