Vishay / Siliconix - MOSFETs
4,727 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHP065N60E-BE3 TTI: SIHP065N60E-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 600V 40A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 57 mOhms | 30 V | 3 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | SIHP065N60E-GE3 | ||||
Mfr: SI4434ADY-T1-GE3 TTI: SI4434ADY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 250V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 250 V | 4.1 A | 150 mOhms | 20 V | 2 V | 10.9 nC | - 55 C | + 150 C | 6 W | Enhancement | Reel | |||||
Mfr: SIHB12N60E-GE3 TTI: SIHB12N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | |||||
Mfr: SIHA100N60E-GE3 TTI: SIHA100N60E-GE3 Vishay / Siliconix MOSFETs 600V Vds; +/-30V Vgs Thin-Lead TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 | |||||
Mfr: SI2347DS-T1-BE3 TTI: SI2347DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CHANNEL 30-V (D-S) | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2347DS-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2374DS-T1-GE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
Mfr: SISS54DN-T1-GE3 TTI: SISS54DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 30 V | 185.6 A | 1.06 mOhms | - 12 V, 16 V | 2.2 V | 47.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUP60061EL-GE3 TTI: SUP60061EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs SC70 P CHAN 80V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 80 V | 150 A | 8.1 mOhms | 20 V | 2.5 V | 218 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA4263DJ-T1-GE3 TTI: SIA4263DJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK P CHAN 20V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.5 A | 19.9 mOhms | 8 V | 1 V | 19.8 nC | - 55 C | + 150 C | 3.29 W | Enhancement | Reel | |||||
Mfr: SIA4265EDJ-T1-GE3 TTI: SIA4265EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK P CHAN 20V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.8 A | 32 mOhms | 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 2.9 W | Enhancement | Reel | |||||
Mfr: SIA112LDJ-T1-GE3 TTI: SIA112LDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAKSC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 8.8 A | 119 mOhms | 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 15 W | Enhancement | Reel | |||||
Mfr: SIR5623DP-T1-RE3 TTI: SIR5623DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 60 V | 37.1 A | 24 mOhms | 20 V | 2.6 V | 21.8 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: SIA477EDJ-T1-GE3 TTI: SIA477EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 12V 14mOhm@4.5V 12A P-Ch | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11.6 mOhms | 8 V | 1 V | 87 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2399DS-T1-GE3 TTI: SI2399DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2399DS-T1-BE3 | |||
Mfr: SIHG180N60E-GE3 TTI: SIHG180N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | 30 V | 3 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SI1308EDL-T1-BE3 TTI: SI1308EDL-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SC70 N CHAN 30V | 0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-GE3 | |||
Mfr: SIHG052N60EF-GE3 TTI: SIHG052N60EF-GE3 Vishay / Siliconix MOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 48 A | 52 mOhms | 30 V | 5 V | 67 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: IRLL014TRPBF-BE3 TTI: IRLL014TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT22 3 NCHA N60V | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 60 V | 2.7 A | 200 mOhms | 10 V | 2 V | 8.4 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL014TRPBF | ||||
Mfr: IRFL9110TRPBF-BE3 TTI: IRFL9110TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 100V 1.1A P-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 100 V | 1.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL9110TRPBF | ||||
Mfr: IRFR014PBF-BE3 TTI: IRFR014PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 N CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014PBF | ||||
Mfr: IRFZ24PBF-BE3 TTI: IRFZ24PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRFZ24PBF | ||||
Mfr: SI1427EDH-T1-BE3 TTI: SI1427EDH-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT363 P CHAN 20V | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2 A | 165 mOhms | 8 V | 1 V | 21 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1427EDH-T1-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-GE3 |