Vishay / Siliconix - MOSFETs
4,711 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4456DY-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: Not Available OnlineMOSFETs 40V 33A 7.8W 3.8mohm @ 10V | Not Available Online | Si | TrenchFET | Reel | SI4456DY-GE3 | |||||||||||||||||
0In Stock | Si | SMD/SMT | TSOP-6 | TrenchFET | Reel | SI3443CVD-E3 | ||||||||||||||||
Mfr: SI7110DN-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 20V 21.1A 3.8W 5.3mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 21.1 A | 5.3 mOhms | - 20 V, 20 V | 2.5 V | 14 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7110DN-GE3 | |||
Mfr: SIHP23N60E-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP23N60E-BE3 | ||||
Mfr: SQJ914EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs Dual 30V Vds 20V Vgs AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 2 Channel | 30 V | 30 A | 9.8 mOhms | - 20 V, 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 27 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SQJA92EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 80V PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 80 V | 57 A | 7.8 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SQJB70EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs Dual N-Ch 100V AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 2 Channel | 100 V | 11.3 A | 78 mOhms | - 20 V, 20 V | 3 V | 7 nC | - 55 C | + 175 C | 27 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SIS822DNT-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | TrenchFET, PowerPAK | Reel | ||||||||||||||||||
Mfr: SIA413ADJ-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | TrenchFET | Reel | ||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 430 A | 0.0004 Ohms | - 8 V, 12 V | 1.5 V | 207 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 2 Channel | 40 V | 30 A | 7.8 mOhms | - 20 V, 20 V | 2.2 V | 52 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 100 A | 3.2 mOhms | - 20 V, 20 V | 2 V | 60 nC | - 55 C | + 175 C | 150 W | Enhancement | TrenchFET | ||||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SQM40010EL_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs N Ch 40Vds 20Vgs AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.21 mOhms | - 20 V, 20 V | 1.5 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR110TRLPBF | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2365EDS-T1-GE3 | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 800 V | 2.9 A | 2.5 Ohms | - 30 V, 30 V | 4 V | 7 nC | - 55 C | + 155 C | 62.5 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 40 V | 30 A | 80 mOhms | - 20 V, 20 V | 2.2 V | 26 nC | - 55 C | + 175 C | 34 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | PowerPAK-8x8-4 | N-Channel | 1 Channel | 40 V | 375 A | 1.3 mOhms | - 20 V, 20 V | 3.5 V | 69 nC | - 55 C | + 175 C | 325 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIJA74DP-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 40V (D-S) 150C MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 40 V | 81.2 A | 3.99 mOhms | - 16 V, 20 V | 2.4 V | 27 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET | Reel | ||||
Not Available Online | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | - 30 V, 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR210TRPBF | |||||
0In Stock | Si | SMD/SMT | PowerPAK-10x12-8 | N-Channel | 1 Channel | 650 V | 28 A | 0.139 Ohms | 20 V | 5 V | 51 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel |
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