Vishay - MOSFETs
1,359 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | |||||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 60 V | 24.7 A | 11.5 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 27.1 W | Enhancement | |||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 120 mOhms | 1.5 V | 5.4 nC | - 55 C | + 175 C | 3 W | Enhancement | ||||||||
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0In Stock | Si | SMD/SMT | SO-8L Dual BWL | N-Channel | 2 Channel | 60 V | 62 A | 10.5 mOhms | - 20 V, 20 V | 2 V | 17 nC | - 55 C | + 175 C | 86 W | ||||||||
0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 34 A | 1.15 mOhms | - 20 V, 20 V | 4 V | 278 nC | - 55 C | + 175 C | 3.4 W | Enhancement | |||||||
0In Stock | Si | SMD/SMT | 1212-8W | N-Channel | 1 Channel | 40 V | 16 A | 8.7 mOhms | - 10 V, 10 V | 2.5 V | 4 nC | - 55 C | + 175 C | 39.47 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 5 A | 50 mOhms | 8 V | 1 V | 9.3 nC | - 55 C | + 175 C | 2 W | Enhancement | |||||||
0In Stock | Reel | |||||||||||||||||||||
0In Stock | Si | 60 V | 14.6 A | 12.4 mOhms | - 20 V, 20 V | 4 V | 11.2 nC | - 55 C | + 150 C | 3.6 W | Reel | |||||||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 203 mOhms | - 20 V, 20 V | 1.5 V | 20 nC | - 55 C | + 175 C | 27.8 W | Enhancement | Reel | ||||||
Mfr: SIHM080N60E-T1-GE3 TTI: Not Assigned Vishay Availability: 0In StockMOSFETs E Series Power MOSFET PowerPAK 8x8L | 0In Stock | Si | SMD/SMT | PowerPAK-8x8L | N-Channel | 1 Channel | 600 V | 51 A | 84 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8L | N-Channel | 1 Channel | 100 V | 37 A | 64 mOhms | 20 V | 2.5 V | 84 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | 1212-8S | N-Channel | 1 Channel | 60 V | 81.2 A | 4.3 mOhms | - 20 V, 20 V | 2.5 V | 15.2 nC | - 55 C | + 150 C | 4.8 W | ||||||||
Mfr: SQJ161ELP-T1_GE3 TTI: Not Assigned Vishay Availability: 0In StockMOSFETs Automotive P-Channel 60 V (D-S) 175 DegC MOSFET | 0In Stock | |||||||||||||||||||||
Not Available Online | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | - 8 V, 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | SI1467DH-T1-E3 SI1467DH-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SO-8L | N-Channel | 1 Channel | 30 V | 202 A | 1.8 mOhms | - 20 V, 20 V | 3 V | 58 nC | - 55 C | + 175 C | 130 W | ||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.5 A | 170 mOhms | 20 V | 2.5 V | 4.5 nC | - 55 C | + 175 C | 1.9 W | Enhancement | |||||||
0In Stock | Si | SMD/SMT | PowerPAK-16 | N-Channel | 1 Channel | 100 V | 417 A | 1.4 mOhms | - 20 V, 20 V | 4 V | 131 nC | - 55 C | + 175 C | 536 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8L | N-Channel | 1 Channel | 30 V | 101 A | 3.25 mOhms | - 20 V, 20 V | 2 V | 33 nC | - 55 C | + 175 C | 60 W | ||||||||
0In Stock | Reel | |||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | - 30 V, 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | |||||||
0In Stock | Si | SMD/SMT | MicroFoot-0.8x0.8-4 | N-Channel | 1 Channel | 30 V | 2.2 A | 128 mOhms | - 12 V, 12 V | 1 V | 4.6 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SC-75-6 | N-Channel | 1 Channel | 100 V | 5.9 A | 160 mOhms | - 20 V, 20 V | 4 V | 3.8 nC | - 55 C | + 150 C | 12.5 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHB125N65E-GE3 TTI: Not Assigned Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 | N-Channel | 1 Channel | 650 V | 27 A | 120 mOhms | - 30 V, 30 V | 5 V | 38 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube |
