ROHM Semiconductor - SiC MOSFETs
179 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
Not Available Online | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 14 A | 364 mOhms | - 6 V, + 22 V | 4 V | 36 nC | + 175 C | 108 W | Enhancement | SCT2280KE | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DE | ||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 24 A | 62 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 93 W | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | AEC-Q101 | ||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 750 V | 38 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 115 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 750 V | 22 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | SMD/SMT | TO-263CA-7L | 1 Channel | 1.7 kV | 5.6 A | 975 mOhms | - 6 V, + 22 V | 4 V | 28 nC | - 55 C | + 175 C | 53 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 750 V | 56 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 176 W | Enhancement | SCT4026DR | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KR | ||||||
Mfr: SCT3160KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3160KLHR | ||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 40 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | Enhancement | ||||||||
Mfr: SCT3120ALGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 103 W | Enhancement | SCT3120AL | |||||
Mfr: SCT2280KEC TTI: SCT2280KEC ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs MOSFET1200V14A280m OhmSiliconCarbideSiC | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 14 A | 280 mOhms | - 6 V, + 22 V | 1.6 V | 36 nC | - 55 C | + 175 C | 108 W | Enhancement | SCT2280KE | ||||
Not Available Online | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 14 A | 364 mOhms | - 6 V, + 22 V | 4 V | 36 nC | + 175 C | 108 W | Enhancement | SCT2280KEHR | ||||||
Mfr: SCT3080ALHRC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 650V 30A 134W SIC 80mOhm TO-247N | Not Available Online | Through Hole | TO-247N-3 | 1 Channel | 650 V | 30 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 134 W | Enhancement | AEC-Q101 | SCT3080ALHR | ||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 14 A | 280 mOhms | - 6 V, + 22 V | 4 V | 36 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | Through Hole | TO-247N-3 | 1 Channel | 650 V | 118 A | 22.1 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | + 175 C | 427 W | Enhancement | SCT3017AL | ||||||
Mfr: SCT3022KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V 95A 427W SIC 22mOhm TO-247N | Not Available Online | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 95 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | AEC-Q101 | SCT3022KLHR | |||
Mfr: SCT3080KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 2.7 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | AEC-Q101 | SCT3080KLHR | |||
Not Available Online | Through Hole | TO-247-4 | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DRHR |
