IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | 30 V | 3.5 V | 108 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 44 A | 40 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | 1 Channel | 1.2 kV | 16 A | 960 mOhms | 30 V | 3.5 V | 120 nC | 660 W | Enhancement | Polar | Reel | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 7 A | 1.44 Ohms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26 A | 130 mOhms | 30 V | 5 V | 45 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 150 V | 400 A | 3.1 mOhms | 20 V | 4.5 V | 430 nC | - 55 C | + 175 C | 1.5 kW | Enhancement | HiPerFET | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 55 V | 90 A | 8.4 mOhms | 20 V | 2 V | - 55 C | + 175 C | 150 W | TrenchT2 | Reel | |||||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 220 A | 3.5 mOhms | 20 V | 2 V | 112 nC | - 55 C | + 175 C | 360 W | Enhancement | TrenchT2 | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | TrenchP | Reel | ||||
Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 70 A | 12 mOhms | 20 V | 2 V | 46 nC | - 55 C | + 175 C | 150 W | Enhancement | TrenchT2 | Reel | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 12 A | 2.2 Ohms | 30 V | 2.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11.8 Ohms | 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Polar | Reel | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 66 A | 74 mOhms | 30 V | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 66 A | 74 mOhms | 30 V | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
Mfr: IXTT50P085 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs -50 Amps -85V 0.055 Rds | Not Available Online | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 85 V | 50 A | 55 mOhms | Tube | |||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 11 A | 950 mOhms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 6 A | 1.8 Ohms | HyperFET | Tube | |||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 7 A | 1.4 Ohms | 20 V | - 55 C | + 150 C | 180 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | HiPerFET | Tube | |||||||||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 600 V | 4 A | 2 Ohms | 30 V | 5.5 V | 13 nC | - 55 C | + 150 C | 89 W | Enhancement | PolarHV | Tube | |||||
Mfr: MKE38RK600DFELB TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs CoolMOS Power MOSFET | Not Available Online | Si | SMD/SMT | ISOPLUS-SMPD-9 | N-Channel | 600 V | 50 A | 45 mOhms | HiPerFET |