IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 75 A | 42 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||||
Mfr: IXTP180N055T TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 180 Amps 55V 0.004 Ohm Rds | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 180 A | 4 mOhms | Tube | |||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 32 A | 78 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 200 W | Enhancement | HiPerFET | Tube | ||||||
Mfr: IXTQ23N60Q TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 23 Amps 600V 0.320 Rds | Not Available Online | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 23 A | 320 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
Not Available Online | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 74 A | 27 Ohms | Bulk | ||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 25 A | 75 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||||
Mfr: IXTT10N100D TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 10 Amps 1000V 1.4 Rds | Not Available Online | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1 kV | 10 A | 1.4 Ohms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 400 W | Depletion | Tube | ||||
Not Available Online | Si | Through Hole | TO-251-3 | 100 V | 44 A | 25 Ohms | Tube | ||||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | 150 V | 130 A | 12 Ohms | Bulk | ||||||||||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 100 mOhms | - 20 V, 20 V | - 40 C | + 150 C | Enhancement | Tube | ||||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 80 A | 9 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 230 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 14 A | 700 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 21 A | 250 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 280 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 550 V | 26 A | 230 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 375 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 30 A | 160 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 230 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 70 A | 28 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 74 A | 30 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 360 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 9 A | 1.1 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | HyperFET | Tube | ||||||
Mfr: IXFK120N25 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 120 Amps 250V 0.022 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 120 A | 22 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 560 W | Enhancement | HyperFET | Tube | |||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 450 V | 7 A | 80 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||||
Mfr: IXTH14N100 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 14 Amps 1000V 0.82 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 14 A | 820 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 360 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 330 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 400 W | Depletion | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 170 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 360 W | Enhancement | Tube |
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