IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFH80N085 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs HiPerFETTM Power MOSFET | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 85 V | 80 A | 9 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | |||||
Mfr: GWM120-0075X1-SLSAM TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 3 Phase Full Bridge | Not Available Online | Si | SMD/SMT | ISOPLUS-DIL-17 | N-Channel | 6 Channel | 75 V | 110 A | 4.9 mOhms | Bulk | |||||||||||
Mfr: IXTA182N055T7 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 182 Amps 55V 4.4 Rds | Not Available Online | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 55 V | 182 A | 5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 24 A | 175 mOhms | - 30 V, 30 V | 2.5 V | 47 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | TrenchT2 | Reel | ||||
Not Available Online | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 2.2 A | 1 Ohms | - 15 V, 15 V | - 55 C | + 125 C | Depletion | Clare | Reel | |||||||
Not Available Online | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 36 A | 90 mOhms | - 20 V, 20 V | 5 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | ISO247-3 | N-Channel | 650 V | 25 A | 80 mOhms | - 20 V, 20 V | 3.5 V | - 55 C | + 150 C | CoolMOS | Tube | ||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 2.5 kV | 5 A | - 20 V, 20 V | 3 V | 10.6 nC | - 55 C | + 150 C | 32 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 180 A | 6 mOhms | - 20 V, 20 V | 2 V | 185 nC | - 55 C | + 175 C | 480 W | Enhancement | Reel | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 170 A | 6.7 mOhms | - 20 V, 20 V | 2.5 V | 122 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 200 V | 130 A | 16 mOhms | - 20 V, 20 V | 2.5 V | - 55 C | + 175 C | 830 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 250 V | 86 A | 37 mOhms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 540 W | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 44.5 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 50 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | - 20 V, 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 3 V | 155 nC | 600 W | Enhancement | PolarHV | Reel | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | - 30 V, 30 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | 27 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube |
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