IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||||
Mfr: IXTV30N60P TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 30.0 Amps 600 V 0.24 Ohm Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 2 A | 5 Ohms | - 30 V, 30 V | 5.5 V | 10.6 nC | - 55 C | + 150 C | 70 W | Enhancement | PolarHV | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 11 A | 750 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 230 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 1.5 A | 11 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.6 Ohms | - 20 V, 20 V | 5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 8 A | 1.2 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 12 A | 1.1 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 20 A | 420 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 360 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 21 A | 250 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 200 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 40 A | 85 mOhms | - 20 V, 20 V | 4 V | 177 nC | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 58 A | 40 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2 Ohms | - 20 V, 20 V | 4.5 V | 88 nC | - 55 C | + 150 C | 180 W | Enhancement | HyperFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 44 A | 120 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 22 A | 390 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 400 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 500 V | 32 A | 160 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 416 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 300 V | 40 A | 80 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | ISOPLUS i4-PAC-5 | N-Channel | 1 Channel | 500 V | 21 A | 220 mOhms | - 20 V, 20 V | 4.5 V | 95 nC | - 55 C | + 150 C | Enhancement | ISOPLUS i4-PAC | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 110 mOhms | - 20 V, 20 V | 3 V | 53 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38 A | 70 mOhms | - 20 V, 20 V | 3.9 V | 250 nC | - 40 C | + 150 C | Enhancement | CoolMOS, ISOPLUS247 | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 74 A | 34 mOhms | - 20 V, 20 V | 2.5 V | 107 nC | - 55 C | + 175 C | 400 W | Enhancement | Tube | |||||
Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 3.6 A | 2 Ohms | - 30 V, 30 V | 5.5 V | 9.3 nC | - 55 C | + 150 C | 70 W | Enhancement | PolarHV | Tube | ||||
Mfr: IXTP8N50PM TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 4.6 Amps 500V 0.8 Ohm Rds | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4 A | 880 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 41 W | Enhancement | Tube |
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