IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | - 20 V, 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 88 A | 22 mOhms | - 20 V, 20 V | 4 V | 170 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 60 Ohms | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | 1.2 kV | 12 A | 1 Ohms | Tube | ||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | - 20 V, 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | - 20 V, 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | TO-268-3 | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 90 A | 38 mOhms | - 30 V, 30 V | 2.5 V | 210 nC | - 55 C | + 150 C | 1.1 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | 6 V | 47 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 300 V | 54 A | 72 Ohms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 2 V | 185 nC | - 55 C | + 150 C | 289 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 295 mOhms | - 30 V, 30 V | 3 V | 42 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 20 V, 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 150 V | 15 A | 240 mOhms | Tube | |||||||||||||
Mfr: IXFT170N25X3HV TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 170 A | 6.1 mOhms | - 20 V, 20 V | 2.5 V | 190 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 55 mOhms | - 30 V, 30 V | 2.5 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 2.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Reel | |||||
Mfr: IXTP60N20X4 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | - 20 V, 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | |||
Mfr: IXFY5N50P3 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 500 V | 5 A | 1.65 Ohms | HiPerFET | Tube | |||||||||||
Mfr: MXB12R600DPHFC TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 650V X2 MOSFET boost leg in ISOPLUS i4 pak | 0In Stock | Si | Through Hole | ISOPLUS-i4-PAC-5 | N-Channel | 1 Channel | 650 V | 18 A | 160 mOhms | - 40 V, 40 V | 5 V | 37 nC | - 40 C | + 125 C | Enhancement | ISOPLUS | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 90 A | 33 mOhms | - 20 V, 20 V | 5.2 V | 95 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | |||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | - 20 V, 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube |
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