IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 1.9 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 250 V | 44 A | 72 Ohms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 200 V | 72 A | 33 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.1 kV | 21 A | 280 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 357 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | 4 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 44 A | 85 Ohms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1 A | 15 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | - 20 V, 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 108 A | 13 mOhms | - 20 V, 20 V | 4 V | 240 nC | - 55 C | + 150 C | 312 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 102 A | 30 mOhms | - 30 V, 30 V | 3 V | 152 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 100 V | 18 A | 120 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | 5 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 16 A | 950 mOhms | - 30 V, 30 V | 6.5 V | 120 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 2.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFT340N075T2 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 75 V | 340 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 300 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 360 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 330 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH28N60P3 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 28 A | 260 mOhms | - 30 V, 30 V | 5 V | 50 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube |
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