IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 36 A | 60 Ohms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247AD-3 | 400 V | 22 A | Tube | |||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 3 A | 8 Ohms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 36 V | 380 A | 1 mOhms | - 15 V, 15 V | 2 V | 260 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | 27 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | - 20 V, 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 250 A | 6.5 mOhms | - 20 V, 20 V | 5 V | 205 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | - 20 V, 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | - 20 V, 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 20 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Polar | Tube | ||||
Mfr: IXFX80N60P3 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 80 A | 70 mOhms | - 30 V, 30 V | 5 V | 190 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 990 mOhms | - 30 V, 30 V | 5 V | 270 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.5 Ohms | - 20 V, 20 V | 4.5 V | 200 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
Mfr: IXFX52N60Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 52 Amps 600V 0.12 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 52 A | 115 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 735 W | Enhancement | HyperFET | Tube | |||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 190 mOhms | - 20 V, 20 V | 3.9 V | 87 nC | - 55 C | + 150 C | 125 W | Enhancement | CoolMOS | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 9.5 A | 1 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 150 A | 13 mOhms | - 20 V, 20 V | 5 V | 190 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 500 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 5.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube |
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