IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | - 30 V, 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | SMD-24 | N-Channel | 6 Channel | 150 V | 50 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | Enhancement | ISOPLUS-DIL | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 20 V, 20 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 20 A | 570 mOhms | - 30 V, 30 V | 3.5 V | 193 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | - 20 V, 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | HyperFET | Tube | ||||
Mfr: IXTT30N50L2 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs LINEAR L2 SERIES MOSFET 500V 30A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 30 A | 215 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 5.5 mOhms | - 55 C | + 175 C | 550 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 2 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Reel | |||||
Mfr: IXFX120N30P3 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 120 A | 27 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | - 30 V, 30 V | 3 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SMD-24 | N-Channel | 150 V | 50 A | 24 mOhms | Bulk | |||||||||||||
Mfr: IXFA230N075T2-7 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs TrenchT2 HiperFETs Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 24 A | 175 mOhms | - 30 V, 30 V | 2.5 V | 47 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 375 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 28 A | 45 mOhms | - 15 V, 15 V | - 55 C | + 150 C | 83 W | Tube | ||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 90 A | 8.4 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 200 V | 72 A | 33 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 5.5 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 40 W | Reel | ||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 500 V | 26 A | 240 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 40 V | 230 A | 2.9 mOhms | - 15 V, 15 V | 2 V | - 55 C | + 175 C | 340 W | HiPerFET | Tube |
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