IXYS - MOSFETs
2,313 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | - 15 V, 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 180 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXFB110N60P3 TTI: IXFB110N60P3 IXYS Availability: Not Available OnlineMOSFETs 600V 110A 0.056Ohm PolarP3 Power MOSFET | Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 110 A | 56 mOhms | - 30 V, 30 V | 5 V | 245 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Trench | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | |||||
Mfr: IXTH60N20X4 TTI: IXTH60N20X4 IXYS Availability: 0In StockMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | - 20 V, 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 80 A | 32 mOhms | - 20 V, 20 V | 4 V | 180 nC | - 55 C | + 150 C | 520 W | Enhancement | Linear | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | - 20 V, 20 V | 2 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | - 20 V, 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | - 20 V, 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | - 30 V, 30 V | 3 V | 60 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube |