IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 210 A | 7.5 mOhms | 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | 20 V | 4 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
Mfr: IXTA60N20X4 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET | Not Available Online | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: IXFT88N30P TTI: Not Assigned IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 300V 88A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 120 V | 80 A | 17 mOhms | 20 V | 2.5 V | 80 nC | - 55 C | + 175 C | 325 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTP28P065T TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 28 Amps 65V 0.045 Rds | Not Available Online | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 28 A | 45 mOhms | 15 V | 2.5 V | 46 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 180 A | 7.5 mOhms | 20 V | 2.5 V | 154 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 36 A | 60 Ohms | Tube | ||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 24 A | 165 mOhms | 20 V | 2.5 V | 52 nC | - 55 C | + 150 C | 250 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 300 V | 54 A | 72 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 300 V | 54 A | 72 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | 20 V | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Bulk | ||||||
Mfr: IXFR27N80Q TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 27 Amps 800V 0.35W Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 27 A | 300 mOhms | 20 V | - 55 C | + 150 C | 500 W | Enhancement | Tube | ||||||
Mfr: IXTH160N10T TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 160 Amps 100V 6.9 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 160 A | 5.8 mOhms | 30 V | 2.5 V | 132 nC | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||
Not Available Online | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 800 V | 14 A | 700 mOhms | 30 V | 3 V | 61 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.2 Ohms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube |