IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | - 30 V, 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 7 A | 1.5 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | 3 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | - 30 V, 30 V | 5 V | 71 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 20 A | 570 mOhms | - 30 V, 30 V | 3.5 V | 193 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 24 A | 450 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | Tube | ||||||||||||
Mfr: IXTA1R4N100P TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 1.4 Amps 1000V 11 Rds | Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | 150 V | 56 A | 36 mOhms | HiPerFET | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 250 V | 62 A | 50 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 62 A | 50 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 72 A | 33 mOhms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | - 20 V, 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXTA270N04T4-7 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 40V/270A TrenchT4 Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 270 A | 2.2 mOhms | - 15 V, 15 V | 2 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 30 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX100N65X2 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs MOSFET 650V/100A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 100 A | 30 mOhms | - 30 V, 30 V | 2.7 V | 180 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 220 A | 4 mOhms | - 20 V, 20 V | 2 V | 136 nC | - 55 C | + 175 C | 440 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 20 V, 20 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | Trench | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 230 A | 2.9 mOhms | - 15 V, 15 V | 2 V | 140 nC | - 55 C | + 175 C | 340 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 100 A | 13.5 mOhms | - 20 V, 20 V | 4.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube |
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