IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Trench | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | 20 V | 4.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | |||||
Mfr: IXTH60N20X4 TTI: IXTH60N20X4 IXYS Availability: 0In StockMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 300 mOhms | 30 V | 5 V | 160 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 80 A | 65 mOhms | 30 V | 3 V | 197 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR38N80Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 38 Amps 800V 0.24 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 28 A | 300 mOhms | 30 V | - 55 C | + 150 C | 416 W | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | 20 V | 5 V | 156 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 25 A | 125 mOhms | 20 V | 4 V | 180 nC | - 40 C | + 150 C | 250 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 55 V | 110 A | 7 mOhms | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | |||||||
Mfr: IXTP05N100 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 0.75 Amps 1000V 15 Rds | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1 A | 20 Ohms | 20 V | 2.5 V | 17.6 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | 30 V | 5.5 V | 58 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFB72N55Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 72 Amps 550V 0.07 Rds | Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 550 V | 72 A | 72 mOhms | 30 V | - 55 C | + 150 C | 890 W | Enhancement | HyperFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | 30 V | 5.5 V | 55 nC | - 55 C | + 150 C | 350 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 110 A | 24 mOhms | 20 V | 3 V | 157 nC | - 55 C | + 150 C | 694 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 200 V | 98 A | 26 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 300 V | 54 A | 72 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 200 V | 98 A | 26 Ohms | Tube |