Reference Only

VS-ENZ025C60N

Obsolete
Discrete Semiconductor Modules

Manufacturer:

Mfr Part:
VS-ENZ025C60N

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryDiscrete Semiconductor Modules
ProductMOSFET-Diode Modules
TypePressFit Power Module
TechnologySi
Vr - Reverse Voltage600 V
Vgs - Gate-Source Voltage- 20 V, + 20 V
Mounting StylePress Fit
Package / CaseEMIPAK
Maximum Operating Temperature+ 150 C
PackagingBulk
Configuration1-Phase Bridge
Fall Time22 ns
Id - Continuous Drain Current26 A
Pd - Power Dissipation104 W
Product TypeDiscrete Semiconductor Modules
Rds On - Drain-Source Resistance71 mOhms
Rise Time26 ns
SubcategoryDiscrete Semiconductor Modules
Transistor PolarityN-Channel
Typical Turn-Off Delay Time111 ns
Typical Turn-On Delay Time83 ns
Vds - Drain-Source Breakdown Voltage600 V
Vgs th - Gate-Source Threshold Voltage2.6 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541590080
TARIC8541590000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

Technical Resources

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Bulk

Pricing not available for this package type
Need pricing?