Reference Only

SQS161ELNW-T1_GE3

MOSFETs Automotive P-Channel 60 V (D-S) 175C MOSFET.

Manufacturer:

Mfr Part:
SQS161ELNW-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / Case1212-8SLW
Transistor PolarityP-Channel
Number of Channels3 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current250 uA
Rds On - Drain-Source Resistance20 mOhms
Vgs - Gate-Source Voltage- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge30 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation119 W
Channel ModeEnhancement
Fall Time14 ns
Forward Transconductance - Min25 S
Product TypeMOSFETs
Rise Time4 ns
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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