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SQJ112EP-T1_GE3

New Product
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET.

Manufacturer:

Mfr Part:
SQJ112EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current95 A
Rds On - Drain-Source Resistance7.7 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge58 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation185 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time5 ns
Forward Transconductance - Min115 S
Product TypeMOSFETs
Rise Time4 ns
SeriesSQJ112EP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 39 Weeks
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