Reference Only

SIZF906DDT-T1-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SIZF906DDT-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / Case6x5F
Transistor PolarityN-Channel, NPN
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current105 A, 257 A
Rds On - Drain-Source Resistance2.1 mOhms, 9 mOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.2 V
Qg - Gate Charge11 nC, 38 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation83 W
Product TypeMOSFETs
SeriesSIZF
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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