Reference Only

SIZ346DT-T1-GE3

MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3.

Manufacturer:

Mfr Part:
SIZ346DT-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAIR-3x3-8
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current17 A, 30 A
Rds On - Drain-Source Resistance11.5 mOhms, 28.5 mOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.2 V, 2.4 V
Qg - Gate Charge6.6 nC, 10 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation16 W, 16.7 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time7 ns, 8 ns
Forward Transconductance - Min17 S
Product TypeMOSFETs
Rise Time15 ns, 40 ns
SeriesSIZ
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time7 ns, 17 ns
Typical Turn-On Delay Time7 ns, 8 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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(Minimum: 6,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.273$1,638.00
$0.269$2,421.00
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