Reference Only

SIZ256DT-T1-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SIZ256DT-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage70 V
Id - Continuous Drain Current31.8 A
Rds On - Drain-Source Resistance17.6 mOhms
Vgs - Gate-Source Voltage12 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge8.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation33 W
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time14 ns
Product TypeMOSFETs
Rise Time35 ns
SubcategoryTransistors
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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