Reference Only

SISS5208DN-T1-GE3

MOSFETs 20V Vds +8 / -7 Vgs PowerPAK 1212-8S.

Manufacturer:

Mfr Part:
SISS5208DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK 1212-8S
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current172 A
Rds On - Drain-Source Resistance1.3 mOhms
Vgs - Gate-Source Voltage- 7 V, 8 V
Vgs th - Gate-Source Threshold Voltage1.3 V
Qg - Gate Charge45 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation56.8 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time5 ns
Product TypeMOSFETs
Rise Time5 ns
SeriesSISS
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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