Reference Only

SISS5110DN-T1-GE3

MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 12.6 m a. 10V 12.5 m a. 7.5V.

Manufacturer:

Mfr Part:
SISS5110DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current46.3 A
Rds On - Drain-Source Resistance12.6 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge12.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation56.8 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time6 ns
Forward Transconductance - Min25 S
Moisture SensitiveYes
Product TypeMOSFETs
Rise Time5 ns
SeriesSISS
SubcategoryTransistors
Typical Turn-Off Delay Time11 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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