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SISS22DN-T1-BE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SISS22DN-T1-BE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8S
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current90.6 A
Rds On - Drain-Source Resistance0.004 Ohms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3.6 V
Qg - Gate Charge28.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation65.7 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time6 ns
Forward Transconductance - Min50 S
Product TypeMOSFET
Rise Time6 ns
SeriesSISS22DN
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
HTS8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 38 Weeks
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(Minimum: 6,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.585$3,510.00
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