Reference Only

SISS176LDN-T1-UE3

MOSFETs .

Manufacturer:

Mfr Part:
SISS176LDN-T1-UE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8S
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage70 V
Id - Continuous Drain Current42.3 A
Rds On - Drain-Source Resistance10.9 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage1.6 V
Qg - Gate Charge12.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation39 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time6 ns
Forward Transconductance - Min60 S
Product TypeMOSFETs
Rise Time6 ns
SeriesSISS
SubcategoryTransistors
Transistor TypeTrenchFET Gen IV Power MOSFET
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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