Reference Only

SIRC10DP-T1-GE3

MOSFETs 30V Vds 20V Vgs PowerPAK SO-8.

Manufacturer:

Mfr Part:
SIRC10DP-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance3.5 mOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.4 V
Qg - Gate Charge24 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation43 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time9 ns
Product TypeMOSFETs
Rise Time30 ns
SeriesSIR
SubcategoryTransistors
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 4 Weeks
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Reel

(Minimum: 6,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.455$2,730.00
$0.433$3,897.00
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